Epitaxial growth of single-crystal Si_1-xGe_x on Si(100) by ion beam sputter deposition

TY - JOUR

T1 - Epitaxial growth of single-crystal Si1-xGex on Si(100) by ion beam sputter deposition

AU - Meyer, F.

AU - Schwebel, C.

AU - Pellet, C.

AU - Gautherin, G.

AU - Buxbaum, A.

AU - Eizenberg, M.

AU - Raizman, A.

N1 - Funding Information: The work at the Technion was supported by the Coleman Cohen Research Fund and by the Fund for the Promotion of Research at the Technion.

PY - 1990/1

Y1 - 1990/1

N2 - The first results are reported on Si1-xGex epitaxial layers grown on Si(100) by ion beam sputter deposition in ultrahigh vacuum. Growth temperatures were varied from 300 to 700°C, for compositions in the range 0.05 < x < 0.5. The properties of the grown films, such as morphology and structure, were studied by scanning electron microscopy and reflection high-energy electron diffraction respectively. Results indicate good monocrystallinity for the entire range of deposition temperature used. For deposition temperatures over 300°C, the films have smooth surfaces for all compositions and thicknesses. The distorted lattice parameters of epitaxial Si0.7Ge0.3 layers were measured by double-crystal diffractometry and the tetragonal strain was calculated. Increasing deposition temperature results in strain relaxation. Layers 3000 Å thick grown at 400°C still retain a larger strain than that measured in a similar layer grown by molecular beam epitaxy. All these results may show the effects of energetic bombardment on the growing film.

AB - The first results are reported on Si1-xGex epitaxial layers grown on Si(100) by ion beam sputter deposition in ultrahigh vacuum. Growth temperatures were varied from 300 to 700°C, for compositions in the range 0.05 < x < 0.5. The properties of the grown films, such as morphology and structure, were studied by scanning electron microscopy and reflection high-energy electron diffraction respectively. Results indicate good monocrystallinity for the entire range of deposition temperature used. For deposition temperatures over 300°C, the films have smooth surfaces for all compositions and thicknesses. The distorted lattice parameters of epitaxial Si0.7Ge0.3 layers were measured by double-crystal diffractometry and the tetragonal strain was calculated. Increasing deposition temperature results in strain relaxation. Layers 3000 Å thick grown at 400°C still retain a larger strain than that measured in a similar layer grown by molecular beam epitaxy. All these results may show the effects of energetic bombardment on the growing film.

UR - http://www.scopus.com/inward/record.url?scp=0025236064&partnerID=8YFLogxK

U2 - 10.1016/0040-6090(90)90404-2

DO - 10.1016/0040-6090(90)90404-2

M3 - 文章

AN - SCOPUS:0025236064

SN - 0040-6090

VL - 184

SP - 117

EP - 123

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -