Enhanced Schottky barriers produced by recoil implantation of Mg into n-GaAs

M. Eizenberg; A. C. Callegari; D. K. Sadana; H. J. Hovel; T. N. Jackson

doi:10.1063/1.101306

Enhanced Schottky barriers produced by recoil implantation of Mg into n-GaAs

M. Eizenberg^*, A. C. Callegari, D. K. Sadana, H. J. Hovel, T. N. Jackson

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Enhancement of Schottky barrier height of Ti-Pt-Au on n-type GaAs was obtained by heavily (2×10¹⁸ cm^-3) counter doping the near-surface region of the substrate. The p-type region was produced by recoil implantation of Mg from a Mg thin film (300 Å) irradiated by a 60 keV As⁺ beam. The film was subsequently chemically etched. The recoil-implanted samples showed an enhancement of 140 meV in the Schottky barrier height following rapid thermal annealing in an AsH₃ furnace at 850°C for nominal zero second.

Original language	English
Pages (from-to)	1696-1698
Number of pages	3
Journal	Applied Physics Letters
Volume	54
Issue number	17
DOIs	https://doi.org/10.1063/1.101306
State	Published - 1989
Externally published	Yes

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title = "Enhanced Schottky barriers produced by recoil implantation of Mg into n-GaAs",

abstract = "Enhancement of Schottky barrier height of Ti-Pt-Au on n-type GaAs was obtained by heavily (2×1018 cm-3) counter doping the near-surface region of the substrate. The p-type region was produced by recoil implantation of Mg from a Mg thin film (300 {\AA}) irradiated by a 60 keV As+ beam. The film was subsequently chemically etched. The recoil-implanted samples showed an enhancement of 140 meV in the Schottky barrier height following rapid thermal annealing in an AsH3 furnace at 850°C for nominal zero second.",

author = "M. Eizenberg and Callegari, {A. C.} and Sadana, {D. K.} and Hovel, {H. J.} and Jackson, {T. N.}",

year = "1989",

doi = "10.1063/1.101306",

language = "英语",

volume = "54",

pages = "1696--1698",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Enhanced Schottky barriers produced by recoil implantation of Mg into n-GaAs

AU - Eizenberg, M.

AU - Callegari, A. C.

AU - Sadana, D. K.

AU - Hovel, H. J.

AU - Jackson, T. N.

PY - 1989

Y1 - 1989

N2 - Enhancement of Schottky barrier height of Ti-Pt-Au on n-type GaAs was obtained by heavily (2×1018 cm-3) counter doping the near-surface region of the substrate. The p-type region was produced by recoil implantation of Mg from a Mg thin film (300 Å) irradiated by a 60 keV As+ beam. The film was subsequently chemically etched. The recoil-implanted samples showed an enhancement of 140 meV in the Schottky barrier height following rapid thermal annealing in an AsH3 furnace at 850°C for nominal zero second.

AB - Enhancement of Schottky barrier height of Ti-Pt-Au on n-type GaAs was obtained by heavily (2×1018 cm-3) counter doping the near-surface region of the substrate. The p-type region was produced by recoil implantation of Mg from a Mg thin film (300 Å) irradiated by a 60 keV As+ beam. The film was subsequently chemically etched. The recoil-implanted samples showed an enhancement of 140 meV in the Schottky barrier height following rapid thermal annealing in an AsH3 furnace at 850°C for nominal zero second.

UR - http://www.scopus.com/inward/record.url?scp=36549104383&partnerID=8YFLogxK

U2 - 10.1063/1.101306

DO - 10.1063/1.101306

M3 - 文章

AN - SCOPUS:36549104383

SN - 0003-6951

VL - 54

SP - 1696

EP - 1698

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -

Enhanced Schottky barriers produced by recoil implantation of Mg into n-GaAs

Abstract

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