Energy band discontinuities in heterojunctions measured by internal photoemission

M. Heiblum; M. I. Nathan; M. Eizenberg

doi:10.1063/1.96107

Energy band discontinuities in heterojunctions measured by internal photoemission

M. Heiblum^*, M. I. Nathan, M. Eizenberg

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

50 Scopus citations

Abstract

A novel method involving internal photoemission has been developed to determine the conduction band discontinuity Δ E_c of heterojunctions. The method is straightforward, accurate, and assumes minimum unknowns; and has been applied to GaAs/Al_xGa_1-xAs heterojunctions. We have found for x<0.4 that Δ E_c≅0.62 Δ E_g, where Δ E_g is the band-gap difference. For x>0.4, the apparent Δ E_c is considerably smaller.

Original language	English
Pages (from-to)	503-505
Number of pages	3
Journal	Applied Physics Letters
Volume	47
Issue number	5
DOIs	https://doi.org/10.1063/1.96107
State	Published - 1985
Externally published	Yes

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title = "Energy band discontinuities in heterojunctions measured by internal photoemission",

abstract = "A novel method involving internal photoemission has been developed to determine the conduction band discontinuity Δ Ec of heterojunctions. The method is straightforward, accurate, and assumes minimum unknowns; and has been applied to GaAs/AlxGa1-xAs heterojunctions. We have found for x<0.4 that Δ Ec≅0.62 Δ Eg, where Δ Eg is the band-gap difference. For x>0.4, the apparent Δ Ec is considerably smaller.",

author = "M. Heiblum and Nathan, {M. I.} and M. Eizenberg",

year = "1985",

doi = "10.1063/1.96107",

language = "英语",

volume = "47",

pages = "503--505",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Energy band discontinuities in heterojunctions measured by internal photoemission

AU - Heiblum, M.

AU - Nathan, M. I.

AU - Eizenberg, M.

PY - 1985

Y1 - 1985

N2 - A novel method involving internal photoemission has been developed to determine the conduction band discontinuity Δ Ec of heterojunctions. The method is straightforward, accurate, and assumes minimum unknowns; and has been applied to GaAs/AlxGa1-xAs heterojunctions. We have found for x<0.4 that Δ Ec≅0.62 Δ Eg, where Δ Eg is the band-gap difference. For x>0.4, the apparent Δ Ec is considerably smaller.

AB - A novel method involving internal photoemission has been developed to determine the conduction band discontinuity Δ Ec of heterojunctions. The method is straightforward, accurate, and assumes minimum unknowns; and has been applied to GaAs/AlxGa1-xAs heterojunctions. We have found for x<0.4 that Δ Ec≅0.62 Δ Eg, where Δ Eg is the band-gap difference. For x>0.4, the apparent Δ Ec is considerably smaller.

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U2 - 10.1063/1.96107

DO - 10.1063/1.96107

M3 - 文章

AN - SCOPUS:0010418595

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VL - 47

SP - 503

EP - 505

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -

Energy band discontinuities in heterojunctions measured by internal photoemission

Abstract

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