Elimination of the weak inversion hump in Si3N 4/InGaAs (001) gate stacks using an in situ NH3 pre-treatment

Igor Krylov*, Arkady Gavrilov, Dan Ritter, Moshe Eizenberg

*Corresponding author for this work

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Silicon nitride thin films were deposited by plasma enhanced chemical vapor deposition on In0.53Ga0.47As (001) surfaces with and without NH3 pre-deposition treatments. The influence of the NH 3 pre-deposition treatments on the electrical properties of the Si3N4/In0.53Ga0.47As interface was investigated by frequency dependent capacitance-voltage and conductance-voltage measurements. A fully unpinned C-V behavior was obtained for all samples. Samples that underwent NH3 pre-deposition treatment exhibited electrical characteristics with no evidence of the midgap interface states (Dit) effects in weak inversion, which are reported in the literature on In0.53Ga0.47As capacitors.

Original languageEnglish
Article number203504
JournalApplied Physics Letters
Issue number20
StatePublished - 14 Nov 2011
Externally publishedYes


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