The morphology of the nucleation stage and of the bulk aluminum film were studied using electron microscopy. The nucleation and growth of chemical vapor deposited (CVD)-aluminum was assessed on the following substrate configuration, CVD Al on TiN/Ti/SiO2/Si. The nucleation stage of the deposition was characterized by the formation of discontinuous Al islands, which merged with increasing deposition time. The integrated samples has a lower number of nuclei and a larger Al coverage as compared to the air-exposed samples. Air exposure of the samples prior to CVD Al resulted in an oxidized surface state of the TiN, which strongly affected both the nucleation and growth of the films.
|Number of pages
|Journal of Computer-Assisted Microscopy
|Published - Mar 1998