Abstract
The extent of Fermi-level pinning at metal/ Gd2 O3 interfaces is studied as a function of oxide structure by comparing the flatband voltage of Ta- and Pt-gated capacitors. The flatband voltage shift between the two metals, which equals the difference in effective work functions, was found to be largest when the oxide is single crystalline (1.30±0.05 V), while lower values are measured when the oxide is domain structured (1.05±0.05 V) or amorphous (0.80±0.05 V). These results indicate that long-range ordering has a dominant effect on Fermi-level pinning at metal/high- k interfaces.
Original language | English |
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Article number | 193513 |
Journal | Applied Physics Letters |
Volume | 93 |
Issue number | 19 |
DOIs | |
State | Published - 2008 |
Externally published | Yes |