Effect of H on interface properties of Al2O3/In 0.53Ga0.47As

Zuoguang Liu; Sharon Cui; Pini Shekhter; Xiao Sun; Lior Kornblum; Jie Yang; Moshe Eizenberg; K. S. Chang-Liao; T. P. Ma

doi:10.1063/1.3665395

Effect of H on interface properties of Al₂O₃/In _0.53Ga_0.47As

Zuoguang Liu^*, Sharon Cui, Pini Shekhter, Xiao Sun, Lior Kornblum, Jie Yang, Moshe Eizenberg, K. S. Chang-Liao, T. P. Ma

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We report that depositing Al₂O₃ on InGaAs in an H-containing ambient (e.g., in forming gas) results in significant reduction of interface-trap density and significantly suppressed frequency dispersion of accumulation capacitance. The results of the inelastic electron tunneling spectroscopy study reveal that strong trap features at the Al₂O ₃/InGaAs interface in the InGaAs band gap are largely removed by depositing Al₂O₃ in an H-containing ambient. Transmission electron microscopy images and x-ray photoelectron spectroscopy data shed some light on the role of hydrogen in improving interface properties of the Al ₂O₃/In_0.53Ga_0.47As gate stack.

Original language	English
Article number	222104
Journal	Applied Physics Letters
Volume	99
Issue number	22
DOIs	https://doi.org/10.1063/1.3665395
State	Published - 28 Nov 2011
Externally published	Yes

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title = "Effect of H on interface properties of Al2O3/In 0.53Ga0.47As",

abstract = "We report that depositing Al2O3 on InGaAs in an H-containing ambient (e.g., in forming gas) results in significant reduction of interface-trap density and significantly suppressed frequency dispersion of accumulation capacitance. The results of the inelastic electron tunneling spectroscopy study reveal that strong trap features at the Al2O 3/InGaAs interface in the InGaAs band gap are largely removed by depositing Al2O3 in an H-containing ambient. Transmission electron microscopy images and x-ray photoelectron spectroscopy data shed some light on the role of hydrogen in improving interface properties of the Al 2O3/In0.53Ga0.47As gate stack.",

author = "Zuoguang Liu and Sharon Cui and Pini Shekhter and Xiao Sun and Lior Kornblum and Jie Yang and Moshe Eizenberg and Chang-Liao, {K. S.} and Ma, {T. P.}",

note = "Funding Information: This work has been supported by the Defense Threat Reduction Agency under Contract No. HDTRA1-08-10-BRCWMD and by the National Science Foundation under Contract No. MRSEC DMR 0520495.",

year = "2011",

month = nov,

day = "28",

doi = "10.1063/1.3665395",

language = "英语",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - Effect of H on interface properties of Al2O3/In 0.53Ga0.47As

AU - Liu, Zuoguang

AU - Cui, Sharon

AU - Shekhter, Pini

AU - Sun, Xiao

AU - Kornblum, Lior

AU - Yang, Jie

AU - Eizenberg, Moshe

AU - Chang-Liao, K. S.

AU - Ma, T. P.

N1 - Funding Information: This work has been supported by the Defense Threat Reduction Agency under Contract No. HDTRA1-08-10-BRCWMD and by the National Science Foundation under Contract No. MRSEC DMR 0520495.

PY - 2011/11/28

Y1 - 2011/11/28

N2 - We report that depositing Al2O3 on InGaAs in an H-containing ambient (e.g., in forming gas) results in significant reduction of interface-trap density and significantly suppressed frequency dispersion of accumulation capacitance. The results of the inelastic electron tunneling spectroscopy study reveal that strong trap features at the Al2O 3/InGaAs interface in the InGaAs band gap are largely removed by depositing Al2O3 in an H-containing ambient. Transmission electron microscopy images and x-ray photoelectron spectroscopy data shed some light on the role of hydrogen in improving interface properties of the Al 2O3/In0.53Ga0.47As gate stack.

AB - We report that depositing Al2O3 on InGaAs in an H-containing ambient (e.g., in forming gas) results in significant reduction of interface-trap density and significantly suppressed frequency dispersion of accumulation capacitance. The results of the inelastic electron tunneling spectroscopy study reveal that strong trap features at the Al2O 3/InGaAs interface in the InGaAs band gap are largely removed by depositing Al2O3 in an H-containing ambient. Transmission electron microscopy images and x-ray photoelectron spectroscopy data shed some light on the role of hydrogen in improving interface properties of the Al 2O3/In0.53Ga0.47As gate stack.

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U2 - 10.1063/1.3665395

DO - 10.1063/1.3665395

M3 - 文章

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SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 222104

ER -

Effect of H on interface properties of Al₂O₃/In _0.53Ga_0.47As

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