Effect of H on interface properties of Al2O3/In 0.53Ga0.47As

Zuoguang Liu*, Sharon Cui, Pini Shekhter, Xiao Sun, Lior Kornblum, Jie Yang, Moshe Eizenberg, K. S. Chang-Liao, T. P. Ma

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


We report that depositing Al2O3 on InGaAs in an H-containing ambient (e.g., in forming gas) results in significant reduction of interface-trap density and significantly suppressed frequency dispersion of accumulation capacitance. The results of the inelastic electron tunneling spectroscopy study reveal that strong trap features at the Al2O 3/InGaAs interface in the InGaAs band gap are largely removed by depositing Al2O3 in an H-containing ambient. Transmission electron microscopy images and x-ray photoelectron spectroscopy data shed some light on the role of hydrogen in improving interface properties of the Al 2O3/In0.53Ga0.47As gate stack.

Original languageEnglish
Article number222104
JournalApplied Physics Letters
Issue number22
StatePublished - 28 Nov 2011
Externally publishedYes


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