TY - JOUR
T1 - Effect of annealing on Ni-doped ZnO nanoparticles synthesized by the co-precipitation method
AU - Khan, Rajwali
AU - Zulfiqar,
AU - Muneeb-Ur-Rehman,
AU - Fashu, Simbarashe
AU - Zia-Ur-Rehman,
N1 - Publisher Copyright:
© 2017, Springer Science+Business Media New York.
PY - 2017/7/1
Y1 - 2017/7/1
N2 - Pure and Zn0.98Ni0.02O nanostructures were prepared by the co-precipitation method. The effects of annealing in Argon (Ar) and oxygen (O2) environment on the structure, dielectric, electric and magnetic properties were investigated. The structural analysis from X-ray diffraction and energy dispersive X-ray results confirmed that all the nanoparticles samples indexed to hexagonal wurtzite ZnO structure. A significant decrease was observed in the dielectric constant (εr) and dielectric loss (ε′′) resulting from the incorporation of Ni into the ZnO lattice. Higher εr and ε′′ were observed in the O2 annealed sample. Moreover, the AC electrical conductivity (αAC) of the Ni doped ZnO sample increased in comparison with that of pure ZnO sample due to the increase of available charge carriers after replacement of Zn ions with Ni ions. The 2 wt% Ni-doped ZnO sample annealed in O2 and Ar environment revealed room temperature ferromagnetism (RTFM) behavior, but higher ferromagnetic was only observed in the O2 annealed sample. The origin of RTFM may originate from the exchange interaction between Ni2+ and excess of O2 vacancy in Zn0.98Ni0.02O nanoparticles.
AB - Pure and Zn0.98Ni0.02O nanostructures were prepared by the co-precipitation method. The effects of annealing in Argon (Ar) and oxygen (O2) environment on the structure, dielectric, electric and magnetic properties were investigated. The structural analysis from X-ray diffraction and energy dispersive X-ray results confirmed that all the nanoparticles samples indexed to hexagonal wurtzite ZnO structure. A significant decrease was observed in the dielectric constant (εr) and dielectric loss (ε′′) resulting from the incorporation of Ni into the ZnO lattice. Higher εr and ε′′ were observed in the O2 annealed sample. Moreover, the AC electrical conductivity (αAC) of the Ni doped ZnO sample increased in comparison with that of pure ZnO sample due to the increase of available charge carriers after replacement of Zn ions with Ni ions. The 2 wt% Ni-doped ZnO sample annealed in O2 and Ar environment revealed room temperature ferromagnetism (RTFM) behavior, but higher ferromagnetic was only observed in the O2 annealed sample. The origin of RTFM may originate from the exchange interaction between Ni2+ and excess of O2 vacancy in Zn0.98Ni0.02O nanoparticles.
UR - http://www.scopus.com/inward/record.url?scp=85015972692&partnerID=8YFLogxK
U2 - 10.1007/s10854-017-6774-0
DO - 10.1007/s10854-017-6774-0
M3 - 文章
AN - SCOPUS:85015972692
SN - 0957-4522
VL - 28
SP - 10122
EP - 10130
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 14
ER -