Directed kinetic self-assembly of mounds on patterned GaAs (001): Tunable arrangement, pattern amplification and self-limiting growth

Chuan Fu Lin, Hung Chih Kan, Subramaniam Kanakaraju, Christopher Richardson, Raymond Phaneuf*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We present results demonstrating directed self-assembly of nanometer-scale mounds during molecular beam epitaxial growth on patterned GaAs (001) surfaces. The mound arrangement is tunable via the growth temperature, with an inverse spacing or spatial frequency which can exceed that of the features of the template. We find that the range of film thickness over which particular mound arrangements persist is finite, due to an evolution of the shape of the mounds which causes their growth to self-limit. A difference in the film thickness at which mounds at different sites self-limit provides a means by which different arrangements can be produced.

Original languageEnglish
Pages (from-to)344-354
Number of pages11
JournalNanomaterials
Volume4
Issue number2
DOIs
StatePublished - Jun 2014
Externally publishedYes

Keywords

  • Crystal growth
  • Directed self-assembly
  • Growth mounds
  • Nanostructures
  • Pattern amplification
  • Self-assembly
  • Self-limiting behavior

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