DIFFUSION BARRIER FOR PtSi/Si STRUCTURES.

M. Eizenberg; J. W. Mayer; K. N. Tu

DIFFUSION BARRIER FOR PtSi/Si STRUCTURES.

M. Eizenberg^*, J. W. Mayer, K. N. Tu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Platinum silicide forms a high barrier height Schottky barrier diode to silicon, and aluminum is used as a low resistance metallization. During conventional heat treatment (sintering) of the Al/PtSi/Si structure at temperatures around 450 degree C, penetration of Al into PtSi occurs and, after a longer time, Al can penetrate into the interface between PtSi and Si. This reduces the barrier height. In order to overcome this problem, diffusion barriers, such as TiW, CrO//x, or TiN//x, are deposited between the PtSi layer and the Al layer.

Original language	English
Pages (from-to)	3708-3709
Number of pages	2
Journal	IBM technical disclosure bulletin
Volume	27
Issue number	7 A
State	Published - Dec 1984
Externally published	Yes

Cite this

@article{2e829ed03f204845a0a299658f6692e1,

title = "DIFFUSION BARRIER FOR PtSi/Si STRUCTURES.",

abstract = "Platinum silicide forms a high barrier height Schottky barrier diode to silicon, and aluminum is used as a low resistance metallization. During conventional heat treatment (sintering) of the Al/PtSi/Si structure at temperatures around 450 degree C, penetration of Al into PtSi occurs and, after a longer time, Al can penetrate into the interface between PtSi and Si. This reduces the barrier height. In order to overcome this problem, diffusion barriers, such as TiW, CrO//x, or TiN//x, are deposited between the PtSi layer and the Al layer.",

author = "M. Eizenberg and Mayer, {J. W.} and Tu, {K. N.}",

year = "1984",

month = dec,

language = "英语",

volume = "27",

pages = "3708--3709",

journal = "IBM technical disclosure bulletin",

issn = "0018-8689",

number = "7 A",

}

TY - JOUR

T1 - DIFFUSION BARRIER FOR PtSi/Si STRUCTURES.

AU - Eizenberg, M.

AU - Mayer, J. W.

AU - Tu, K. N.

PY - 1984/12

Y1 - 1984/12

N2 - Platinum silicide forms a high barrier height Schottky barrier diode to silicon, and aluminum is used as a low resistance metallization. During conventional heat treatment (sintering) of the Al/PtSi/Si structure at temperatures around 450 degree C, penetration of Al into PtSi occurs and, after a longer time, Al can penetrate into the interface between PtSi and Si. This reduces the barrier height. In order to overcome this problem, diffusion barriers, such as TiW, CrO//x, or TiN//x, are deposited between the PtSi layer and the Al layer.

AB - Platinum silicide forms a high barrier height Schottky barrier diode to silicon, and aluminum is used as a low resistance metallization. During conventional heat treatment (sintering) of the Al/PtSi/Si structure at temperatures around 450 degree C, penetration of Al into PtSi occurs and, after a longer time, Al can penetrate into the interface between PtSi and Si. This reduces the barrier height. In order to overcome this problem, diffusion barriers, such as TiW, CrO//x, or TiN//x, are deposited between the PtSi layer and the Al layer.

UR - http://www.scopus.com/inward/record.url?scp=0021608288&partnerID=8YFLogxK

M3 - 文章

AN - SCOPUS:0021608288

SN - 0018-8689

VL - 27

SP - 3708

EP - 3709

JO - IBM technical disclosure bulletin

JF - IBM technical disclosure bulletin

IS - 7 A

ER -

DIFFUSION BARRIER FOR PtSi/Si STRUCTURES.

Abstract

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