Different Enhancement Mechanisms of the Anodizing Al-Doped or Sn-Coupled Ti3SiC2 for the Photoelectrochemical Performance

Hongfeng Yin; Zhiwei Wang; Yun Tang; Muralidhar Chourashiya; Xiuting Li; Hudie Yuan; Nan Yan; Xiaohu Ren

doi:10.1002/slct.201904493

Different Enhancement Mechanisms of the Anodizing Al-Doped or Sn-Coupled Ti₃SiC₂ for the Photoelectrochemical Performance

Hongfeng Yin^*, Zhiwei Wang, Yun Tang, Muralidhar Chourashiya, Xiuting Li, Hudie Yuan, Nan Yan, Xiaohu Ren

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

TiO₂-based photoanodes are very well known for their photoresponse performance, however, their inability to work in the visible range is still a challenge. To tackle this issue, Al-doped or Sn-coupled Ti₃SiC₂ (Al-TSC or Sn-TSC) is fabricated via a hot-press sintering technique, and the anodized Al-TSC or Sn-TSC is abbreviated as Al-ATSC or Sn-ATSC. The Al-ATSC or Sn-ATSC with optimized doping content of Al or Sn corresponding to a superior photocurrent of 137.24 μA cm⁻² or 126.76 μA cm⁻² which is 18 or 16 times higher than that of the anodized Ti₃SiC₂ (ATSC) (7.6 μA cm⁻²) respectively. The capacitance for Al-ATSC or Sn-ATSC samples can be improved in the presence of visible light illumination. Enhanced photoelectrochemical (PEC) mechanism for Al-ATSC is that generated defects in Al doped TiO₂ (Al-TiO₂) improve the visible light absorption capacity, for Sn-ATSC is the suppressed recombination of hole-electron pairs by the coupling effect of SnO₂/TiO₂.

Original language	English
Pages (from-to)	1496-1505
Number of pages	10
Journal	ChemistrySelect
Volume	5
Issue number	4
DOIs	https://doi.org/10.1002/slct.201904493
State	Published - 31 Jan 2020

Keywords

Al doping
SnO coupling
TiO
TiSiC
photoelectrochemistry

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title = "Different Enhancement Mechanisms of the Anodizing Al-Doped or Sn-Coupled Ti3SiC2 for the Photoelectrochemical Performance",

abstract = "TiO2-based photoanodes are very well known for their photoresponse performance, however, their inability to work in the visible range is still a challenge. To tackle this issue, Al-doped or Sn-coupled Ti3SiC2 (Al-TSC or Sn-TSC) is fabricated via a hot-press sintering technique, and the anodized Al-TSC or Sn-TSC is abbreviated as Al-ATSC or Sn-ATSC. The Al-ATSC or Sn-ATSC with optimized doping content of Al or Sn corresponding to a superior photocurrent of 137.24 μA cm−2 or 126.76 μA cm−2 which is 18 or 16 times higher than that of the anodized Ti3SiC2 (ATSC) (7.6 μA cm−2) respectively. The capacitance for Al-ATSC or Sn-ATSC samples can be improved in the presence of visible light illumination. Enhanced photoelectrochemical (PEC) mechanism for Al-ATSC is that generated defects in Al doped TiO2 (Al-TiO2) improve the visible light absorption capacity, for Sn-ATSC is the suppressed recombination of hole-electron pairs by the coupling effect of SnO2/TiO2.",

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AU - Yin, Hongfeng

AU - Wang, Zhiwei

AU - Tang, Yun

AU - Chourashiya, Muralidhar

AU - Li, Xiuting

AU - Yuan, Hudie

AU - Yan, Nan

AU - Ren, Xiaohu

PY - 2020/1/31

Y1 - 2020/1/31

N2 - TiO2-based photoanodes are very well known for their photoresponse performance, however, their inability to work in the visible range is still a challenge. To tackle this issue, Al-doped or Sn-coupled Ti3SiC2 (Al-TSC or Sn-TSC) is fabricated via a hot-press sintering technique, and the anodized Al-TSC or Sn-TSC is abbreviated as Al-ATSC or Sn-ATSC. The Al-ATSC or Sn-ATSC with optimized doping content of Al or Sn corresponding to a superior photocurrent of 137.24 μA cm−2 or 126.76 μA cm−2 which is 18 or 16 times higher than that of the anodized Ti3SiC2 (ATSC) (7.6 μA cm−2) respectively. The capacitance for Al-ATSC or Sn-ATSC samples can be improved in the presence of visible light illumination. Enhanced photoelectrochemical (PEC) mechanism for Al-ATSC is that generated defects in Al doped TiO2 (Al-TiO2) improve the visible light absorption capacity, for Sn-ATSC is the suppressed recombination of hole-electron pairs by the coupling effect of SnO2/TiO2.

AB - TiO2-based photoanodes are very well known for their photoresponse performance, however, their inability to work in the visible range is still a challenge. To tackle this issue, Al-doped or Sn-coupled Ti3SiC2 (Al-TSC or Sn-TSC) is fabricated via a hot-press sintering technique, and the anodized Al-TSC or Sn-TSC is abbreviated as Al-ATSC or Sn-ATSC. The Al-ATSC or Sn-ATSC with optimized doping content of Al or Sn corresponding to a superior photocurrent of 137.24 μA cm−2 or 126.76 μA cm−2 which is 18 or 16 times higher than that of the anodized Ti3SiC2 (ATSC) (7.6 μA cm−2) respectively. The capacitance for Al-ATSC or Sn-ATSC samples can be improved in the presence of visible light illumination. Enhanced photoelectrochemical (PEC) mechanism for Al-ATSC is that generated defects in Al doped TiO2 (Al-TiO2) improve the visible light absorption capacity, for Sn-ATSC is the suppressed recombination of hole-electron pairs by the coupling effect of SnO2/TiO2.

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Different Enhancement Mechanisms of the Anodizing Al-Doped or Sn-Coupled Ti₃SiC₂ for the Photoelectrochemical Performance

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