Degradation characteristics of metal/Al2O3/n-InGaAs capacitors

F. Palumbo; M. Eizenberg

doi:10.1063/1.4861033

Degradation characteristics of metal/Al₂O₃/n-InGaAs capacitors

F. Palumbo, M. Eizenberg

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Implementation of new materials in Metal-Oxide-Semiconductor stacks requires capabilities to predict long-time degradation as well as the impact of process changes on degradation processes. In this work, the degradation under constant voltage stress of metal gate/Al₂O₃/InGaAs stacks is studied for different pre-dielectric deposition treatments. The results show that the degradation, particularly under negative bias, is strongly affected by the oxide-semiconductor surface treatment of the samples. Two contributions (interface states and bulk traps) dominate depending on the stress conditions. Surface treatment with NH₄OH shows a better quality of the interface in term of interface states; however, it contributes to generation of positive charge on the dielectric layer.

Original language	English
Article number	014106
Journal	Journal of Applied Physics
Volume	115
Issue number	1
DOIs	https://doi.org/10.1063/1.4861033
State	Published - 7 Jan 2014
Externally published	Yes

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10.1063/1.4861033

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title = "Degradation characteristics of metal/Al2O3/n-InGaAs capacitors",

abstract = "Implementation of new materials in Metal-Oxide-Semiconductor stacks requires capabilities to predict long-time degradation as well as the impact of process changes on degradation processes. In this work, the degradation under constant voltage stress of metal gate/Al2O3/InGaAs stacks is studied for different pre-dielectric deposition treatments. The results show that the degradation, particularly under negative bias, is strongly affected by the oxide-semiconductor surface treatment of the samples. Two contributions (interface states and bulk traps) dominate depending on the stress conditions. Surface treatment with NH4OH shows a better quality of the interface in term of interface states; however, it contributes to generation of positive charge on the dielectric layer.",

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AB - Implementation of new materials in Metal-Oxide-Semiconductor stacks requires capabilities to predict long-time degradation as well as the impact of process changes on degradation processes. In this work, the degradation under constant voltage stress of metal gate/Al2O3/InGaAs stacks is studied for different pre-dielectric deposition treatments. The results show that the degradation, particularly under negative bias, is strongly affected by the oxide-semiconductor surface treatment of the samples. Two contributions (interface states and bulk traps) dominate depending on the stress conditions. Surface treatment with NH4OH shows a better quality of the interface in term of interface states; however, it contributes to generation of positive charge on the dielectric layer.

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Degradation characteristics of metal/Al₂O₃/n-InGaAs capacitors

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