Correlation between Ga-O signature and midgap states at the Al ₂O ₃/In _0.53Ga _0.47As interface

TY - JOUR

T1 - Correlation between Ga-O signature and midgap states at the Al 2O 3/In 0.53Ga 0.47As interface

AU - Krylov, Igor

AU - Gavrilov, Arkady

AU - Eizenberg, Moshe

AU - Ritter, Dan

PY - 2012/8/6

Y1 - 2012/8/6

N2 - Al 2O 3/In 0.53Ga 0.47As gate stacks were fabricated using different concentrations of NH 4OH as a pre-deposition treatment. Increased NH 4OH concentrations significantly reduced the C-V weak inversion hump and the measured near midgap interface states density (D it). X-ray photoelectron spectroscopy (XPS) studies revealed that these changes in the electrical properties were accompanied by a reduction in the amount of the Ga-O bonding while As-As dimers as well as other XPS detected InGaAs surface species did not correlate with the observed D it trend. Possible explanations for these findings are suggested.

AB - Al 2O 3/In 0.53Ga 0.47As gate stacks were fabricated using different concentrations of NH 4OH as a pre-deposition treatment. Increased NH 4OH concentrations significantly reduced the C-V weak inversion hump and the measured near midgap interface states density (D it). X-ray photoelectron spectroscopy (XPS) studies revealed that these changes in the electrical properties were accompanied by a reduction in the amount of the Ga-O bonding while As-As dimers as well as other XPS detected InGaAs surface species did not correlate with the observed D it trend. Possible explanations for these findings are suggested.

UR - http://www.scopus.com/inward/record.url?scp=84865127705&partnerID=8YFLogxK

U2 - 10.1063/1.4745012

DO - 10.1063/1.4745012

M3 - 文章

AN - SCOPUS:84865127705

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 063504

ER -