Copper-related degradation of SiO2 in metal-oxide-semiconductor capacitors subjected to bias thermal stress: Leakage of the minority charge carriers in the inversion layer

A. Kohn; E. Lipp; M. Eizenberg; Y. Shacham-Diamand

doi:10.1063/1.1773925

Copper-related degradation of SiO₂ in metal-oxide-semiconductor capacitors subjected to bias thermal stress: Leakage of the minority charge carriers in the inversion layer

A. Kohn^*, E. Lipp, M. Eizenberg, Y. Shacham-Diamand

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

A mechanism of Cu-related degradation of the SiO₂ in metal-oxide-semiconductor capacitors subjected to bias thermal stress was described. It was predicted that commonly used BTS conditions could result in increased oxide conductivity, which was large enough to enable the leakage of minority carrier charge generated at the inversion layer. The influence of oxide conductivity on the measured current-voltage characteristic was also discussed. It was found that no-inversion layer (NIL) detection is an intermediate SiO₂ degradation between the Cu⁺-related flat-band voltage shifts and decrease of breakdown voltage.

Original language	English
Pages (from-to)	627-629
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	4
DOIs	https://doi.org/10.1063/1.1773925
State	Published - 26 Jul 2004
Externally published	Yes

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10.1063/1.1773925

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title = "Copper-related degradation of SiO2 in metal-oxide-semiconductor capacitors subjected to bias thermal stress: Leakage of the minority charge carriers in the inversion layer",

abstract = "A mechanism of Cu-related degradation of the SiO2 in metal-oxide-semiconductor capacitors subjected to bias thermal stress was described. It was predicted that commonly used BTS conditions could result in increased oxide conductivity, which was large enough to enable the leakage of minority carrier charge generated at the inversion layer. The influence of oxide conductivity on the measured current-voltage characteristic was also discussed. It was found that no-inversion layer (NIL) detection is an intermediate SiO2 degradation between the Cu+-related flat-band voltage shifts and decrease of breakdown voltage.",

author = "A. Kohn and E. Lipp and M. Eizenberg and Y. Shacham-Diamand",

note = "Funding Information: This work was supported by the “MAGNET” program of the Chief Scientist Office at the Israeli Ministry of Industry and Trade, Consortium of Emerging Dielectric and Conductor Technologies for the Semiconductor Industry.",

year = "2004",

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doi = "10.1063/1.1773925",

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journal = "Applied Physics Letters",

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T1 - Copper-related degradation of SiO2 in metal-oxide-semiconductor capacitors subjected to bias thermal stress

T2 - Leakage of the minority charge carriers in the inversion layer

AU - Kohn, A.

AU - Lipp, E.

AU - Eizenberg, M.

AU - Shacham-Diamand, Y.

N1 - Funding Information: This work was supported by the “MAGNET” program of the Chief Scientist Office at the Israeli Ministry of Industry and Trade, Consortium of Emerging Dielectric and Conductor Technologies for the Semiconductor Industry.

PY - 2004/7/26

Y1 - 2004/7/26

N2 - A mechanism of Cu-related degradation of the SiO2 in metal-oxide-semiconductor capacitors subjected to bias thermal stress was described. It was predicted that commonly used BTS conditions could result in increased oxide conductivity, which was large enough to enable the leakage of minority carrier charge generated at the inversion layer. The influence of oxide conductivity on the measured current-voltage characteristic was also discussed. It was found that no-inversion layer (NIL) detection is an intermediate SiO2 degradation between the Cu+-related flat-band voltage shifts and decrease of breakdown voltage.

AB - A mechanism of Cu-related degradation of the SiO2 in metal-oxide-semiconductor capacitors subjected to bias thermal stress was described. It was predicted that commonly used BTS conditions could result in increased oxide conductivity, which was large enough to enable the leakage of minority carrier charge generated at the inversion layer. The influence of oxide conductivity on the measured current-voltage characteristic was also discussed. It was found that no-inversion layer (NIL) detection is an intermediate SiO2 degradation between the Cu+-related flat-band voltage shifts and decrease of breakdown voltage.

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DO - 10.1063/1.1773925

M3 - 文章

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SN - 0003-6951

VL - 85

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Copper-related degradation of SiO₂ in metal-oxide-semiconductor capacitors subjected to bias thermal stress: Leakage of the minority charge carriers in the inversion layer

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