Copper ion diffusion in porous and nonporous SiO₂-based dielectrics using bias thermal stress and thermal stress tests

Engineering & Materials Science

• Thermal stress 93%
• Ions 86%
• Copper 76%
• Activation energy 56%
• Silica 55%
• Plasma enhanced chemical vapor deposition 38%
• Pore structure 33%
• Metals 25%
• Inversion layers 23%
• Surface diffusion 20%
• Low-k dielectric 19%
• Dielectric films 19%
• Hot Temperature 19%
• Self assembly 17%
• Semiconductor devices 15%
• Surface active agents 14%
• Permittivity 13%
• Integrated circuits 12%
• Semiconductor materials 11%
• Capacitors 10%
• Degradation 9%
• Temperature 5%

Chemical Compounds

• Dielectric Material 83%
• Diffusion 58%
• Porosity 54%
• Liquid Film 45%
• Calorific Value 42%
• Reaction Activation Energy 37%
• Ion 37%
• Plasma Enhanced Chemical Vapour Deposition 32%
• Pore Structure 25%
• Dielectric Film 19%
• Surface Diffusion 16%
• Capacitor 13%
• Nanoporosity 12%
• Dielectric Constant 12%
• Surfactant 9%
• Metal 6%

Physics & Astronomy

• thermal stresses 100%
• copper 67%
• ions 44%
• silicon dioxide 36%
• activation energy 34%
• MIS (semiconductors) 26%
• vapor deposition 18%
• porosity 17%
• surface diffusion 12%
• self assembly 12%
• semiconductor devices 12%
• compatibility 11%
• surfactants 11%
• integrated circuits 11%
• interlayers 10%
• capacitors 10%
• inversions 9%
• chips 9%
• degradation 8%
• permittivity 8%
• electrical resistivity 7%
• metals 6%
• temperature 3%