Contact reaction of silicon and thin films of Ir-V alloys

TY - JOUR

T1 - Contact reaction of silicon and thin films of Ir-V alloys

AU - Eizenberg, M.

AU - Brener, R.

PY - 1982/3/26

Y1 - 1982/3/26

N2 - The contact reaction between a silicon substrate and codeposited Ir-V alloy films of composition IrxV100-x where x is 25, 50 or 80 were studied. Interdiffusion and compound formation were analysed by Auger electron spectroscopy and X-ray diffraction. The expected formation of IrSi and Ir2Si3 at relatively low temperatures is prevented by the formation of stable Ir-V intermetallic compounds. Silicide formation is observed only after anneals at about 700°C, when VSi2, Ir2Si3 and tracks of IrSi are detected. This is accompanied by component redistribution in the thin films, the details of which depend on the alloy composition.

AB - The contact reaction between a silicon substrate and codeposited Ir-V alloy films of composition IrxV100-x where x is 25, 50 or 80 were studied. Interdiffusion and compound formation were analysed by Auger electron spectroscopy and X-ray diffraction. The expected formation of IrSi and Ir2Si3 at relatively low temperatures is prevented by the formation of stable Ir-V intermetallic compounds. Silicide formation is observed only after anneals at about 700°C, when VSi2, Ir2Si3 and tracks of IrSi are detected. This is accompanied by component redistribution in the thin films, the details of which depend on the alloy composition.

UR - http://www.scopus.com/inward/record.url?scp=0019540863&partnerID=8YFLogxK

U2 - 10.1016/0040-6090(82)90308-X

DO - 10.1016/0040-6090(82)90308-X

M3 - 文章

AN - SCOPUS:0019540863

SN - 0040-6090

VL - 89

SP - 355

EP - 360

JO - Thin Solid Films

JF - Thin Solid Films

IS - 4

ER -