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Comparison of simulation and measurement of gate leakage current in metal/Al2O3/GaN/AlGaN/AlN/GaN capacitors
Shlomo Solomon Mehari*, Eilam Yalon, Arkady Gavrilov, David Mistele, Gad Bahir, Moshe Eizenberg, Dan Ritter
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
3
Scopus
citations