TY - JOUR
T1 - Cluster model of DC-glow discharge enhanced diamond nucleation
AU - Efremenko, Irena
AU - Sheintuch, Moshe
AU - Gouzman, Irina
AU - Hoffman, Alon
N1 - Funding Information:
The research was supported by the Center for Absorption in Science, Ministry of Immigrant Absorption, State of Israel. We thank Dr. I.L. Zilberberg and Prof. G.M. Zhidomirov from the Institute of Catalysis (Novosibirsk, Russia) for providing the ASED MO code. The support of the Israeli Academy of Science and the Technion foundation for Research are acknowledge.
PY - 1999/3
Y1 - 1999/3
N2 - A theoretical model of DC-glow discharge promoted diamond nucleation is suggested based on a semiempirical quantum chemical study of carbon clusters consisting of a few atoms. Under the standard thermodynamic conditions, the formation of planar aromatic is polyaromatic structures is energetically favorable. The influence of the DC-glow discharge is modeled through a shift in the substrate surface potential which, in turn, determines a shift in the valence state ionization potential (VSIP) of atoms adsorbed on the surface. When changes in VSIP exceed 4 eV, the π-interaction of 2p-orbitals of carbon is suppressed. This effect causes the stabilization of tetrahedral, twined and icosahedral structures over the aromatic ones for small carbon clusters. This effect becomes more pronounced as the cluster size increases. These structures are consider to be precursor for diamond growth under chemical vapor deposition (CVD) conditions.
AB - A theoretical model of DC-glow discharge promoted diamond nucleation is suggested based on a semiempirical quantum chemical study of carbon clusters consisting of a few atoms. Under the standard thermodynamic conditions, the formation of planar aromatic is polyaromatic structures is energetically favorable. The influence of the DC-glow discharge is modeled through a shift in the substrate surface potential which, in turn, determines a shift in the valence state ionization potential (VSIP) of atoms adsorbed on the surface. When changes in VSIP exceed 4 eV, the π-interaction of 2p-orbitals of carbon is suppressed. This effect causes the stabilization of tetrahedral, twined and icosahedral structures over the aromatic ones for small carbon clusters. This effect becomes more pronounced as the cluster size increases. These structures are consider to be precursor for diamond growth under chemical vapor deposition (CVD) conditions.
UR - http://www.scopus.com/inward/record.url?scp=0033514593&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(98)01118-X
DO - 10.1016/S0022-0248(98)01118-X
M3 - 会议文章
AN - SCOPUS:0033514593
SN - 0022-0248
VL - 198-199
SP - 951
EP - 956
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - pt 2
T2 - Proceedings of the 1998 10th International Conference on Vapor Growth and Epitaxy and Specialist Workshops on Crystal Growth, ICVGE-10
Y2 - 26 July 1998 through 31 July 1998
ER -