Characterizations of Zr/Si1-x-yGexCy after rapid thermal annealing

V. Aubry-Fortuna*, M. Barthula, F. Meyer, A. Eyal, C. Cytermann, M. Eizenberg, O. Chaix-Pluchery

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


In this work, we have investigated the reaction between Zr and SiGeC alloys after Rapid Thermal anneals performed at 800 °C for 5 min. The interactions of the metal with the alloy have been investigated by X-Ray diffraction. Four crystal X-Ray diffraction was also performed to measure the residual strain in the epilayer. The final compound of the reaction is the C49-Zr(Si1-xGex)2 phase. The C49 film contains the same Ge concentration as in the as-deposited Si1-x-yGexCy layer. This suggests that no Ge-segregation occurs during annealing. Only a small strain relaxation is detected in the unreacted SiGe epilayer during the reaction. The addition of C in the epilayer prevents any strain relaxation. These results are in contrast with those observed in systems with Ti and Co, and show that the system Zr-Si-Ge is much more stable. Schottky barrier heights have been also measured: annealing leads to a slight decrease of the barrier without any degradation of the contact. The resistivity of the C49 film is about 80 μΩcm. These results indicate that Zr may be a good candidate for contacts on IV-IV alloys in term of thermal stability.

Original languageEnglish
Pages (from-to)49-54
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1998
Externally publishedYes
EventProceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA
Duration: 13 Apr 199817 Apr 1998


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