Characteristics of the dynamics of breakdown filaments in Al2O3/InGaAs stacks

F. Palumbo; P. Shekhter; K. Cohen Weinfeld; M. Eizenberg

doi:10.1063/1.4931496

Characteristics of the dynamics of breakdown filaments in Al₂O₃/InGaAs stacks

F. Palumbo^*, P. Shekhter, K. Cohen Weinfeld, M. Eizenberg

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

In this paper, the Al₂O₃/InGaAs interface was studied by X-ray photoelectron spectroscopy (XPS) after a breakdown (BD) event at positive bias applied to the gate contact. The dynamics of the BD event were studied by comparable XPS measurements with different current compliance levels during the BD event. The overall results show that indium atoms from the substrate move towards the oxide by an electro-migration process and oxidize upon arrival following a power law dependence on the current compliance of the BD event. Such a result reveals the physical feature of the breakdown characteristics of III-V based metal-oxide-semiconductor devices.

Original language	English
Article number	122901
Journal	Applied Physics Letters
Volume	107
Issue number	12
DOIs	https://doi.org/10.1063/1.4931496
State	Published - 21 Sep 2015
Externally published	Yes

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@article{5c707fa7e10443429670f526d8ed60aa,

title = "Characteristics of the dynamics of breakdown filaments in Al2O3/InGaAs stacks",

abstract = "In this paper, the Al2O3/InGaAs interface was studied by X-ray photoelectron spectroscopy (XPS) after a breakdown (BD) event at positive bias applied to the gate contact. The dynamics of the BD event were studied by comparable XPS measurements with different current compliance levels during the BD event. The overall results show that indium atoms from the substrate move towards the oxide by an electro-migration process and oxidize upon arrival following a power law dependence on the current compliance of the BD event. Such a result reveals the physical feature of the breakdown characteristics of III-V based metal-oxide-semiconductor devices.",

author = "F. Palumbo and P. Shekhter and {Cohen Weinfeld}, K. and M. Eizenberg",

note = "Publisher Copyright: {\textcopyright} 2015 AIP Publishing LLC.",

year = "2015",

month = sep,

day = "21",

doi = "10.1063/1.4931496",

language = "英语",

volume = "107",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Characteristics of the dynamics of breakdown filaments in Al2O3/InGaAs stacks

AU - Palumbo, F.

AU - Shekhter, P.

AU - Cohen Weinfeld, K.

AU - Eizenberg, M.

PY - 2015/9/21

Y1 - 2015/9/21

N2 - In this paper, the Al2O3/InGaAs interface was studied by X-ray photoelectron spectroscopy (XPS) after a breakdown (BD) event at positive bias applied to the gate contact. The dynamics of the BD event were studied by comparable XPS measurements with different current compliance levels during the BD event. The overall results show that indium atoms from the substrate move towards the oxide by an electro-migration process and oxidize upon arrival following a power law dependence on the current compliance of the BD event. Such a result reveals the physical feature of the breakdown characteristics of III-V based metal-oxide-semiconductor devices.

AB - In this paper, the Al2O3/InGaAs interface was studied by X-ray photoelectron spectroscopy (XPS) after a breakdown (BD) event at positive bias applied to the gate contact. The dynamics of the BD event were studied by comparable XPS measurements with different current compliance levels during the BD event. The overall results show that indium atoms from the substrate move towards the oxide by an electro-migration process and oxidize upon arrival following a power law dependence on the current compliance of the BD event. Such a result reveals the physical feature of the breakdown characteristics of III-V based metal-oxide-semiconductor devices.

UR - http://www.scopus.com/inward/record.url?scp=84942645729&partnerID=8YFLogxK

U2 - 10.1063/1.4931496

DO - 10.1063/1.4931496

M3 - 文章

AN - SCOPUS:84942645729

SN - 0003-6951

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 122901

ER -

Characteristics of the dynamics of breakdown filaments in Al₂O₃/InGaAs stacks

Abstract

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