Carrier-induced ferromagnetism in Ge(Mn,Fe) magnetic semiconductor thin-film structures

R. R. Gareev; Yu V. Bugoslavsky; R. Schreiber; A. Paul; M. Sperl; M. Döppe

doi:10.1063/1.2208552

Carrier-induced ferromagnetism in Ge(Mn,Fe) magnetic semiconductor thin-film structures

R. R. Gareev^*, Yu V. Bugoslavsky, R. Schreiber, A. Paul, M. Sperl, M. Döppe

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

We report on the carrier-induced ferromagnetism in Ge(Mn,Fe) magnetic semiconductor insulating-type thin-film structures prepared using sequential deposition at Tg =520 K with subsequent annealing at Tg. In the resulting films Mn and Fe are diffused in the Ge matrix without compromising the epitaxial structure. The anomalous Hall effect serves as a manifestation of the carrier-induced magnetism, with p -type conductivity and the Curie temperature TC =209 K. The additional doping with Fe stabilizes epitaxial growth and carrier-mediated magnetism at levels of magnetic doping exceeding 10%. We conclude that indirect ferromagnetic exchange is mediated by localized holes with concentration n∼ 1020 cm-3 and mobility μ∼10 cm2 (V s).

Original language	English
Article number	222508
Journal	Applied Physics Letters
Volume	88
Issue number	22
DOIs	https://doi.org/10.1063/1.2208552
State	Published - 29 May 2006
Externally published	Yes

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@article{37d96c48351548c2b93f96325b008477,

title = "Carrier-induced ferromagnetism in Ge(Mn,Fe) magnetic semiconductor thin-film structures",

abstract = "We report on the carrier-induced ferromagnetism in Ge(Mn,Fe) magnetic semiconductor insulating-type thin-film structures prepared using sequential deposition at Tg =520 K with subsequent annealing at Tg. In the resulting films Mn and Fe are diffused in the Ge matrix without compromising the epitaxial structure. The anomalous Hall effect serves as a manifestation of the carrier-induced magnetism, with p -type conductivity and the Curie temperature TC =209 K. The additional doping with Fe stabilizes epitaxial growth and carrier-mediated magnetism at levels of magnetic doping exceeding 10%. We conclude that indirect ferromagnetic exchange is mediated by localized holes with concentration n∼ 1020 cm-3 and mobility μ∼10 cm2 (V s).",

author = "Gareev, {R. R.} and Bugoslavsky, {Yu V.} and R. Schreiber and A. Paul and M. Sperl and M. D{\"o}ppe",

year = "2006",

month = may,

day = "29",

doi = "10.1063/1.2208552",

language = "英语",

volume = "88",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "22",

}

TY - JOUR

T1 - Carrier-induced ferromagnetism in Ge(Mn,Fe) magnetic semiconductor thin-film structures

AU - Gareev, R. R.

AU - Bugoslavsky, Yu V.

AU - Schreiber, R.

AU - Paul, A.

AU - Sperl, M.

AU - Döppe, M.

PY - 2006/5/29

Y1 - 2006/5/29

N2 - We report on the carrier-induced ferromagnetism in Ge(Mn,Fe) magnetic semiconductor insulating-type thin-film structures prepared using sequential deposition at Tg =520 K with subsequent annealing at Tg. In the resulting films Mn and Fe are diffused in the Ge matrix without compromising the epitaxial structure. The anomalous Hall effect serves as a manifestation of the carrier-induced magnetism, with p -type conductivity and the Curie temperature TC =209 K. The additional doping with Fe stabilizes epitaxial growth and carrier-mediated magnetism at levels of magnetic doping exceeding 10%. We conclude that indirect ferromagnetic exchange is mediated by localized holes with concentration n∼ 1020 cm-3 and mobility μ∼10 cm2 (V s).

AB - We report on the carrier-induced ferromagnetism in Ge(Mn,Fe) magnetic semiconductor insulating-type thin-film structures prepared using sequential deposition at Tg =520 K with subsequent annealing at Tg. In the resulting films Mn and Fe are diffused in the Ge matrix without compromising the epitaxial structure. The anomalous Hall effect serves as a manifestation of the carrier-induced magnetism, with p -type conductivity and the Curie temperature TC =209 K. The additional doping with Fe stabilizes epitaxial growth and carrier-mediated magnetism at levels of magnetic doping exceeding 10%. We conclude that indirect ferromagnetic exchange is mediated by localized holes with concentration n∼ 1020 cm-3 and mobility μ∼10 cm2 (V s).

UR - http://www.scopus.com/inward/record.url?scp=33744793452&partnerID=8YFLogxK

U2 - 10.1063/1.2208552

DO - 10.1063/1.2208552

M3 - 文章

AN - SCOPUS:33744793452

SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 222508

ER -

Carrier-induced ferromagnetism in Ge(Mn,Fe) magnetic semiconductor thin-film structures

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