Border trap reduction in Al2O3/InGaAs gate stacks

Kechao Tang, Roy Winter, Liangliang Zhang, Ravi Droopad, Moshe Eizenberg, Paul C. McIntyre

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The effect of Al2O3 atomic layer deposition (ALD) temperature on the border trap density (Nbt) of Al2O3/InGaAs gate stacks is investigated quantitatively, and we demonstrate that lowering the trimethylaluminum (TMA)/water vapor ALD temperature from 270 °C to 120 °C significantly reduces Nbt. The reduction of Nbt coincides with increased hydrogen incorporation in low temperature ALD-grown Al2O3 films during post-gate metal forming gas annealing. It is also found that large-dose (∼6000 L) exposure of the In0.53Ga0.47As (100) surface to TMA immediately after thermal desorption of a protective As2 capping layer is an important step to guarantee the uniformity and reproducibility of high quality Al2O3/InGaAs samples made at low ALD temperatures.

Original languageEnglish
Article number202102
JournalApplied Physics Letters
Issue number20
StatePublished - 16 Nov 2015
Externally publishedYes


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