Behavior of W and WSix contact metallization on n- and p- type GaN

X. A. Cao*, F. Ren, J. R. Lothian, S. J. Pearton, C. R. Abernathy, J. C. Zolper, M. W. Cole, A. Zeitouny, M. Eizenberg, R. J. Shul

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


Sputter-deposited W-based contacts on p-GaN (NA∼10 18 cm-3) display non-ohmic behavior independent of annealing temperature when measured at 25°C. The transition to ohmic behavior occurs above ∼250°C as more of the acceptors become ionized. The optimum annealing temperature is ∼700°C under these conditions. These contacts are much more thermally stable than the conventional Ni/Au metallization, which shows a severely degraded morphology even at 700°C. W-based contacts may be ohmic as-deposited on very heavily doped n-GaN, and the specific contact resistance improves with annealing up to ∼900°C.

Original languageEnglish
Pages (from-to)6d
JournalMRS Internet Journal of Nitride Semiconductor Research
Issue numberSUPPL. 1
StatePublished - 1999
Externally publishedYes


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