Band alignment of Hf-Zr oxides on Al2O3/GeO 2/Ge stacks

S. Fadida*, M. Eizenberg, L. Nyns, S. Van Elshocht, M. Caymax

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


Band gap and band offsets of hafnium and zirconium oxides were investigated on Ge substrates with a fixed Al2O3/GeO2 passivation layer. Chemical properties and band alignment with Ge were determined by X-ray photoelectron spectroscopy; characterization of structure and morphology was done using transmission electron microscopy. All samples investigated were found to be chemically suitable for Ge advanced applications and with sufficient energy barriers for holes and electrons for the use of Ge as a future channel material.

Original languageEnglish
Pages (from-to)1557-1559
Number of pages3
JournalMicroelectronic Engineering
Issue number7
StatePublished - Jul 2011
Externally publishedYes


  • Band alignment
  • Germanium
  • High mobility channel
  • High-k dielectrics


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