Atomic layer deposition of tungsten film from WF6/B2H6: Nucleation layer for advanced semiconductor devices

Michael Yang; Hua Chung; Alex Yoon; Hongbin Fang; Amy Zhang; Cheryl Knepfler; Robert Jackson; Jeong Soo Byun; Alfred Mak; Moshe Eizenberg; Ming Xi; Moris Kori; A. K. Sinha

Atomic layer deposition of tungsten film from WF₆/B₂H₆: Nucleation layer for advanced semiconductor devices

Michael Yang^*, Hua Chung, Alex Yoon, Hongbin Fang, Amy Zhang, Cheryl Knepfler, Robert Jackson, Jeong Soo Byun, Alfred Mak, Moshe Eizenberg, Ming Xi, Moris Kori, A. K. Sinha

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

10 Scopus citations

Abstract

This paper presents the application of tungsten ALD as an advanced nucleation layer for tungsten plug fill. Tungsten has been deposited by atomic layer deposition (ALD) using WF₆ and B₂H₆. The half reactions of WF₆ with B₂H₆ are shown to be self-limiting, with very short reactant saturation times. The WF₆/B₂H₆ ALD process yields a smooth, conformal fill on high-aspect-ratio via structures. The film has a fluorine content of <2 E18 atoms/cm³ and a resistivity of ∼150 μΩcm. Integration of the ALD nucleation layer with conventional tungsten CVD bulk deposition yields complete contact/via fill for high-aspect ratio structures, which significantly extends the capability of current tungsten CVD technology for IC device manufacturing. Data will also be resented on the use of SiH₄ as an alternative reducing agent.

Original language	English
Pages (from-to)	655-660
Number of pages	6
Journal	Advanced Metallization Conference (AMC)
State	Published - 2001
Externally published	Yes
Event	Advanced Metallization Conference 2001 (AMC 2001) - Montreal, Que., Canada Duration: 8 Oct 2001 → 11 Oct 2001

Cite this

@article{0a97eddaed474605a13a96fb6c7d5fec,

title = "Atomic layer deposition of tungsten film from WF6/B2H6: Nucleation layer for advanced semiconductor devices",

abstract = "This paper presents the application of tungsten ALD as an advanced nucleation layer for tungsten plug fill. Tungsten has been deposited by atomic layer deposition (ALD) using WF6 and B2H6. The half reactions of WF6 with B2H6 are shown to be self-limiting, with very short reactant saturation times. The WF6/B2H6 ALD process yields a smooth, conformal fill on high-aspect-ratio via structures. The film has a fluorine content of <2 E18 atoms/cm3 and a resistivity of ∼150 μΩcm. Integration of the ALD nucleation layer with conventional tungsten CVD bulk deposition yields complete contact/via fill for high-aspect ratio structures, which significantly extends the capability of current tungsten CVD technology for IC device manufacturing. Data will also be resented on the use of SiH4 as an alternative reducing agent.",

author = "Michael Yang and Hua Chung and Alex Yoon and Hongbin Fang and Amy Zhang and Cheryl Knepfler and Robert Jackson and Byun, {Jeong Soo} and Alfred Mak and Moshe Eizenberg and Ming Xi and Moris Kori and Sinha, {A. K.}",

year = "2001",

language = "英语",

pages = "655--660",

journal = "Advanced Metallization Conference (AMC)",

issn = "1048-0854",

note = "Advanced Metallization Conference 2001 (AMC 2001) ; Conference date: 08-10-2001 Through 11-10-2001",

}

TY - JOUR

T1 - Atomic layer deposition of tungsten film from WF6/B2H6

T2 - Advanced Metallization Conference 2001 (AMC 2001)

AU - Yang, Michael

AU - Chung, Hua

AU - Yoon, Alex

AU - Fang, Hongbin

AU - Zhang, Amy

AU - Knepfler, Cheryl

AU - Jackson, Robert

AU - Byun, Jeong Soo

AU - Mak, Alfred

AU - Eizenberg, Moshe

AU - Xi, Ming

AU - Kori, Moris

AU - Sinha, A. K.

PY - 2001

Y1 - 2001

N2 - This paper presents the application of tungsten ALD as an advanced nucleation layer for tungsten plug fill. Tungsten has been deposited by atomic layer deposition (ALD) using WF6 and B2H6. The half reactions of WF6 with B2H6 are shown to be self-limiting, with very short reactant saturation times. The WF6/B2H6 ALD process yields a smooth, conformal fill on high-aspect-ratio via structures. The film has a fluorine content of <2 E18 atoms/cm3 and a resistivity of ∼150 μΩcm. Integration of the ALD nucleation layer with conventional tungsten CVD bulk deposition yields complete contact/via fill for high-aspect ratio structures, which significantly extends the capability of current tungsten CVD technology for IC device manufacturing. Data will also be resented on the use of SiH4 as an alternative reducing agent.

AB - This paper presents the application of tungsten ALD as an advanced nucleation layer for tungsten plug fill. Tungsten has been deposited by atomic layer deposition (ALD) using WF6 and B2H6. The half reactions of WF6 with B2H6 are shown to be self-limiting, with very short reactant saturation times. The WF6/B2H6 ALD process yields a smooth, conformal fill on high-aspect-ratio via structures. The film has a fluorine content of <2 E18 atoms/cm3 and a resistivity of ∼150 μΩcm. Integration of the ALD nucleation layer with conventional tungsten CVD bulk deposition yields complete contact/via fill for high-aspect ratio structures, which significantly extends the capability of current tungsten CVD technology for IC device manufacturing. Data will also be resented on the use of SiH4 as an alternative reducing agent.

UR - http://www.scopus.com/inward/record.url?scp=0035555289&partnerID=8YFLogxK

M3 - 会议文章

AN - SCOPUS:0035555289

SN - 1048-0854

SP - 655

EP - 660

JO - Advanced Metallization Conference (AMC)

JF - Advanced Metallization Conference (AMC)

Y2 - 8 October 2001 through 11 October 2001

ER -

Atomic layer deposition of tungsten film from WF₆/B₂H₆: Nucleation layer for advanced semiconductor devices

Abstract

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