The use of alloy films for silicon contacting can contribute to improvements in three aspects: 1) fabrication of shallow contacts, 2) formation of built-in diffusion barrier layers, and 3) controlling the electrical characteristics of the metal-Si interface. The nature of the reaction of the alloy film with the Si substrate (e. g. compound formation and component redistribution) and therefore the overall properties of the contact which determine its applicability, depend on the alloy composition and applied heat treatments. Studies of many systems enabled finding general trends and classifying various alloys in a few groups. A survey of our results which leads to conclusions about the potential applicability of alloy films for contacting is presented.
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|Published - 1984