Al2 O3-Si O2 stack with enhanced reliability

M. Lisiansky*, A. Fenigstein, A. Heiman, Y. Raskin, Y. Roizin, L. Bartholomew, J. Owyang, A. Gladkikh, R. Brener, I. Geppert, E. Lyakin, B. Meyler, Y. Shnieder, S. Yofis, M. Eizenberg

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


The authors developed a new Al2 O3 -Si O2 (A-O) stack for application as a high voltage complementary metal oxide semiconductor (CMOS) dielectric and/or top oxide in electrically erasable programmable read only memory floating gate and polysilicon-oxide-nitride-oxide-silicon embedded memories in advanced technology nodes. An amorphous atomic layer deposited alumina is doped with nitrogen and transformed into the crystalline phase by further rapid thermal process annealing. The 65 Å effective oxide thickness (EOT) stack allows operating voltages twice exceeding the values for thermal Si O2 of the same EOT, has extremely low leakage currents, has negligible charge trapping, and is immune to degradation. Moreover, after alumina removal, the remaining strongly nitrided bottom oxide layer can be used as the gate dielectric of CMOS devices.

Original languageEnglish
Pages (from-to)476-481
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number1
StatePublished - 2009
Externally publishedYes


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