Advanced composite high-κ gate stack for mixed anion arsenide-antimonide quantum well transistors

A. Ali; H. Madan; R. Misra; E. Hwang; A. Agrawal; I. Ramirez; P. Schiffer; T. N. Jackson; S. E. Mohney; J. B. Boos; B. R. Bennett; I. Geppert; M. Eizenberg; S. Datta

doi:10.1109/IEDM.2010.5703308

Advanced composite high-κ gate stack for mixed anion arsenide-antimonide quantum well transistors

A. Ali^*, H. Madan, R. Misra, E. Hwang, A. Agrawal, I. Ramirez, P. Schiffer, T. N. Jackson, S. E. Mohney, J. B. Boos, B. R. Bennett, I. Geppert, M. Eizenberg, S. Datta

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

9 Scopus citations

Abstract

This paper demonstrates the integration of a composite high-κ gate stack (3.3 nm Al₂O₃-1.0 nm GaSb) with a mixed anion InAs_0.8Sb_0.2 quantum-well field effect transistor (QWFET). The composite gate stack achieves; (i) EOT of 4.2 nm with <10 ^-7A/cm² gate leakage (ii) low D_it interface (∼1x10¹² /cm²/eV) (iii) high drift μ of 3,900-5,060 cm²/V-s at NS of 5×10¹¹-3×10 ¹²/cm². The InAs_0.8Sb_0.2 MOS-QWFETs with composite gate stack exhibit extrinsic (intrinsic) g_m of 334 (502) μS/μm and drive current of 380 μA/μm at V_DS = 0.5V for Lg=1μm.

Original language	English
Title of host publication	2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages	6.3.1-6.3.4
DOIs	https://doi.org/10.1109/IEDM.2010.5703308
State	Published - 2010
Externally published	Yes
Event	2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States Duration: 6 Dec 2010 → 8 Dec 2010

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2010 IEEE International Electron Devices Meeting, IEDM 2010
Country/Territory	United States
City	San Francisco, CA
Period	6/12/10 → 8/12/10

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10.1109/IEDM.2010.5703308

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Ali, A., Madan, H., Misra, R., Hwang, E., Agrawal, A., Ramirez, I., Schiffer, P., Jackson, T. N., Mohney, S. E., Boos, J. B., Bennett, B. R., Geppert, I., Eizenberg, M., & Datta, S. (2010). Advanced composite high-κ gate stack for mixed anion arsenide-antimonide quantum well transistors. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 (pp. 6.3.1-6.3.4). Article 5703308 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703308

@inproceedings{982168d3328148e3b0d15c84e66a3b9b,

title = "Advanced composite high-κ gate stack for mixed anion arsenide-antimonide quantum well transistors",

abstract = "This paper demonstrates the integration of a composite high-κ gate stack (3.3 nm Al2O3-1.0 nm GaSb) with a mixed anion InAs0.8Sb0.2 quantum-well field effect transistor (QWFET). The composite gate stack achieves; (i) EOT of 4.2 nm with <10 -7A/cm2 gate leakage (ii) low Dit interface (∼1x1012 /cm2/eV) (iii) high drift μ of 3,900-5,060 cm2/V-s at NS of 5×1011-3×10 12/cm2. The InAs0.8Sb0.2 MOS-QWFETs with composite gate stack exhibit extrinsic (intrinsic) gm of 334 (502) μS/μm and drive current of 380 μA/μm at VDS = 0.5V for Lg=1μm.",

author = "A. Ali and H. Madan and R. Misra and E. Hwang and A. Agrawal and I. Ramirez and P. Schiffer and Jackson, {T. N.} and Mohney, {S. E.} and Boos, {J. B.} and Bennett, {B. R.} and I. Geppert and M. Eizenberg and S. Datta",

year = "2010",

doi = "10.1109/IEDM.2010.5703308",

language = "英语",

isbn = "9781424474196",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "6.3.1--6.3.4",

booktitle = "2010 IEEE International Electron Devices Meeting, IEDM 2010",

note = "2010 IEEE International Electron Devices Meeting, IEDM 2010 ; Conference date: 06-12-2010 Through 08-12-2010",

}

Ali, A, Madan, H, Misra, R, Hwang, E, Agrawal, A, Ramirez, I, Schiffer, P, Jackson, TN, Mohney, SE, Boos, JB, Bennett, BR, Geppert, I, Eizenberg, M & Datta, S 2010, Advanced composite high-κ gate stack for mixed anion arsenide-antimonide quantum well transistors. in 2010 IEEE International Electron Devices Meeting, IEDM 2010., 5703308, Technical Digest - International Electron Devices Meeting, IEDM, pp. 6.3.1-6.3.4, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, United States, 6/12/10. https://doi.org/10.1109/IEDM.2010.5703308

Advanced composite high-κ gate stack for mixed anion arsenide-antimonide quantum well transistors. / Ali, A.; Madan, H.; Misra, R. et al.
2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. p. 6.3.1-6.3.4 5703308 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Advanced composite high-κ gate stack for mixed anion arsenide-antimonide quantum well transistors

AU - Ali, A.

AU - Madan, H.

AU - Misra, R.

AU - Hwang, E.

AU - Agrawal, A.

AU - Ramirez, I.

AU - Schiffer, P.

AU - Jackson, T. N.

AU - Mohney, S. E.

AU - Boos, J. B.

AU - Bennett, B. R.

AU - Geppert, I.

AU - Eizenberg, M.

AU - Datta, S.

PY - 2010

Y1 - 2010

N2 - This paper demonstrates the integration of a composite high-κ gate stack (3.3 nm Al2O3-1.0 nm GaSb) with a mixed anion InAs0.8Sb0.2 quantum-well field effect transistor (QWFET). The composite gate stack achieves; (i) EOT of 4.2 nm with <10 -7A/cm2 gate leakage (ii) low Dit interface (∼1x1012 /cm2/eV) (iii) high drift μ of 3,900-5,060 cm2/V-s at NS of 5×1011-3×10 12/cm2. The InAs0.8Sb0.2 MOS-QWFETs with composite gate stack exhibit extrinsic (intrinsic) gm of 334 (502) μS/μm and drive current of 380 μA/μm at VDS = 0.5V for Lg=1μm.

AB - This paper demonstrates the integration of a composite high-κ gate stack (3.3 nm Al2O3-1.0 nm GaSb) with a mixed anion InAs0.8Sb0.2 quantum-well field effect transistor (QWFET). The composite gate stack achieves; (i) EOT of 4.2 nm with <10 -7A/cm2 gate leakage (ii) low Dit interface (∼1x1012 /cm2/eV) (iii) high drift μ of 3,900-5,060 cm2/V-s at NS of 5×1011-3×10 12/cm2. The InAs0.8Sb0.2 MOS-QWFETs with composite gate stack exhibit extrinsic (intrinsic) gm of 334 (502) μS/μm and drive current of 380 μA/μm at VDS = 0.5V for Lg=1μm.

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U2 - 10.1109/IEDM.2010.5703308

DO - 10.1109/IEDM.2010.5703308

M3 - 会议稿件

AN - SCOPUS:79951831255

SN - 9781424474196

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 6.3.1-6.3.4

BT - 2010 IEEE International Electron Devices Meeting, IEDM 2010

T2 - 2010 IEEE International Electron Devices Meeting, IEDM 2010

Y2 - 6 December 2010 through 8 December 2010

ER -

Advanced composite high-κ gate stack for mixed anion arsenide-antimonide quantum well transistors

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