A strain tunable single-layer MoS2 photodetector

Patricia Gant; Peng Huang; D. Pérez de Lara; Dan Guo; Riccardo Frisenda; Andres Castellanos-Gomez

doi:10.1016/j.mattod.2019.04.019

A strain tunable single-layer MoS₂ photodetector

Patricia Gant^*, Peng Huang, D. Pérez de Lara, Dan Guo, Riccardo Frisenda, Andres Castellanos-Gomez

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

86 Scopus citations

Abstract

Strain engineering, which aims to tune the bandgap of a semiconductor by the application of strain, has emerged as an interesting way to control the electrical and optical properties of two-dimensional (2D) materials. Apart from the changes in the intrinsic properties of 2D materials, the application of strain can also be used to modify the characteristics of devices based on them. In this work, we study flexible and transparent photodetectors based on single-layer MoS₂ under the application of biaxial strain. We find that by controlling the level of strain, we can tune the photoresponsivity (by 2–3 orders of magnitude), the response time (from <80 ms to 1.5 s), and the spectral bandwidth (with a gauge factor of 135 meV/% or 58 nm/%) of the device.

Original language	English
Pages (from-to)	8-13
Number of pages	6
Journal	Materials Today
Volume	27
DOIs	https://doi.org/10.1016/j.mattod.2019.04.019
State	Published - 1 Jul 2019
Externally published	Yes

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@article{de6551bb2ec3401995a8becae99c8e64,

title = "A strain tunable single-layer MoS2 photodetector",

abstract = "Strain engineering, which aims to tune the bandgap of a semiconductor by the application of strain, has emerged as an interesting way to control the electrical and optical properties of two-dimensional (2D) materials. Apart from the changes in the intrinsic properties of 2D materials, the application of strain can also be used to modify the characteristics of devices based on them. In this work, we study flexible and transparent photodetectors based on single-layer MoS2 under the application of biaxial strain. We find that by controlling the level of strain, we can tune the photoresponsivity (by 2–3 orders of magnitude), the response time (from <80 ms to 1.5 s), and the spectral bandwidth (with a gauge factor of 135 meV/% or 58 nm/%) of the device.",

author = "Patricia Gant and Peng Huang and {P{\'e}rez de Lara}, D. and Dan Guo and Riccardo Frisenda and Andres Castellanos-Gomez",

note = "Publisher Copyright: {\textcopyright} 2019 The Authors",

year = "2019",

month = jul,

day = "1",

doi = "10.1016/j.mattod.2019.04.019",

language = "英语",

volume = "27",

pages = "8--13",

journal = "Materials Today",

issn = "1369-7021",

publisher = "Elsevier",

}

TY - JOUR

T1 - A strain tunable single-layer MoS2 photodetector

AU - Gant, Patricia

AU - Huang, Peng

AU - Pérez de Lara, D.

AU - Guo, Dan

AU - Frisenda, Riccardo

AU - Castellanos-Gomez, Andres

PY - 2019/7/1

Y1 - 2019/7/1

N2 - Strain engineering, which aims to tune the bandgap of a semiconductor by the application of strain, has emerged as an interesting way to control the electrical and optical properties of two-dimensional (2D) materials. Apart from the changes in the intrinsic properties of 2D materials, the application of strain can also be used to modify the characteristics of devices based on them. In this work, we study flexible and transparent photodetectors based on single-layer MoS2 under the application of biaxial strain. We find that by controlling the level of strain, we can tune the photoresponsivity (by 2–3 orders of magnitude), the response time (from <80 ms to 1.5 s), and the spectral bandwidth (with a gauge factor of 135 meV/% or 58 nm/%) of the device.

AB - Strain engineering, which aims to tune the bandgap of a semiconductor by the application of strain, has emerged as an interesting way to control the electrical and optical properties of two-dimensional (2D) materials. Apart from the changes in the intrinsic properties of 2D materials, the application of strain can also be used to modify the characteristics of devices based on them. In this work, we study flexible and transparent photodetectors based on single-layer MoS2 under the application of biaxial strain. We find that by controlling the level of strain, we can tune the photoresponsivity (by 2–3 orders of magnitude), the response time (from <80 ms to 1.5 s), and the spectral bandwidth (with a gauge factor of 135 meV/% or 58 nm/%) of the device.

UR - http://www.scopus.com/inward/record.url?scp=85065777803&partnerID=8YFLogxK

U2 - 10.1016/j.mattod.2019.04.019

DO - 10.1016/j.mattod.2019.04.019

M3 - 文章

AN - SCOPUS:85065777803

VL - 27

SP - 8

EP - 13

JO - Materials Today

JF - Materials Today

SN - 1369-7021

ER -

A strain tunable single-layer MoS₂ photodetector

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