A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors

Igor Krylov, Boaz Pokroy, Moshe Eizenberg, Dan Ritter

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

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Physics & Astronomy