A comparative study of AlN and Al₂O₃ based gate stacks grown by atomic layer deposition on InGaAs

TY - JOUR

T1 - A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs

AU - Krylov, Igor

AU - Pokroy, Boaz

AU - Ritter, Dan

AU - Eizenberg, Moshe

N1 - Publisher Copyright: © 2016 AIP Publishing LLC.

PY - 2016/2/28

Y1 - 2016/2/28

N2 - Thermal activated atomic layer deposited (t) (ALD) and plasma enhanced (p) ALD (PEALD) AlN films were investigated for gate applications of InGaAs based metal-insulator-semiconductor devices and compared to the well-known Al2O3 based system. The roles of post-metallization annealing (PMA) and the pre-deposition treatment (PDT) by either trimethylaluminium (TMA) or NH3 were studied. In contrast to the case of Al2O3, in the case of AlN, the annealing temperature reduced interface states density. In addition, improvement of the AlN film stoichiometry and a related border traps density reduction were observed following PMA. The lowest interface states density (among the investigated gate stacks) was found for PEALD AlN/InGaAs stacks after TMA PDT. At the same time, higher values of the dispersion in accumulation were observed for AlN/InGaAs gate stacks compared to those with Al2O3 dielectric. No indium out-diffusion and the related leakage current degradation due to annealing were observed at the AlN/InGaAs stack. In light of these findings, we conclude that AlN is a promising material for InGaAs based gate stack applications.

AB - Thermal activated atomic layer deposited (t) (ALD) and plasma enhanced (p) ALD (PEALD) AlN films were investigated for gate applications of InGaAs based metal-insulator-semiconductor devices and compared to the well-known Al2O3 based system. The roles of post-metallization annealing (PMA) and the pre-deposition treatment (PDT) by either trimethylaluminium (TMA) or NH3 were studied. In contrast to the case of Al2O3, in the case of AlN, the annealing temperature reduced interface states density. In addition, improvement of the AlN film stoichiometry and a related border traps density reduction were observed following PMA. The lowest interface states density (among the investigated gate stacks) was found for PEALD AlN/InGaAs stacks after TMA PDT. At the same time, higher values of the dispersion in accumulation were observed for AlN/InGaAs gate stacks compared to those with Al2O3 dielectric. No indium out-diffusion and the related leakage current degradation due to annealing were observed at the AlN/InGaAs stack. In light of these findings, we conclude that AlN is a promising material for InGaAs based gate stack applications.

UR - http://www.scopus.com/inward/record.url?scp=84959516783&partnerID=8YFLogxK

U2 - 10.1063/1.4942657

DO - 10.1063/1.4942657

M3 - 文章

AN - SCOPUS:84959516783

SN - 0021-8979

VL - 119

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

M1 - 084507

ER -