A charge-trapping memory structure featuring low-voltage high-speed operation and 250°C retention

C. Y. Peng; W. Q. Zhang; X. Sun; Z. G. Liu; Sharon Cui; T. P. Ma; Lior Kornblum; Moshe Eizenberg

doi:10.1109/DRC.2010.5551969

A charge-trapping memory structure featuring low-voltage high-speed operation and 250°C retention

C. Y. Peng^*, W. Q. Zhang, X. Sun, Z. G. Liu, Sharon Cui, T. P. Ma, Lior Kornblum, Moshe Eizenberg

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We have demonstrated that MAD-Al₂O₃ is an excellent candidate for the tunnel, as well as for the blocking dielectrics in NAND-type memories. Despite the limited minority carrier generation rate, the MANAS capacitors have already demonstrated superb memory characteristics, especially the 250C retention, which we believe is exceptional and unprecedented. The process simplicity is also an attractive feature, making the MANAS structure viable for future generations of non-volatile memories.

Original language	English
Title of host publication	68th Device Research Conference, DRC 2010
Pages	261-262
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2010.5551969
State	Published - 2010
Externally published	Yes
Event	68th Device Research Conference, DRC 2010 - Notre Dame, IN, United States Duration: 21 Jun 2010 → 23 Jun 2010

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Conference

Conference	68th Device Research Conference, DRC 2010
Country/Territory	United States
City	Notre Dame, IN
Period	21/06/10 → 23/06/10

Access to Document

10.1109/DRC.2010.5551969

Cite this

Peng, C. Y., Zhang, W. Q., Sun, X., Liu, Z. G., Cui, S., Ma, T. P., Kornblum, L., & Eizenberg, M. (2010). A charge-trapping memory structure featuring low-voltage high-speed operation and 250°C retention. In 68th Device Research Conference, DRC 2010 (pp. 261-262). Article 5551969 (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2010.5551969

@inproceedings{0bb8dcede6ec429788a5b4a441cd8017,

title = "A charge-trapping memory structure featuring low-voltage high-speed operation and 250°C retention",

abstract = "We have demonstrated that MAD-Al2O3 is an excellent candidate for the tunnel, as well as for the blocking dielectrics in NAND-type memories. Despite the limited minority carrier generation rate, the MANAS capacitors have already demonstrated superb memory characteristics, especially the 250C retention, which we believe is exceptional and unprecedented. The process simplicity is also an attractive feature, making the MANAS structure viable for future generations of non-volatile memories.",

author = "Peng, {C. Y.} and Zhang, {W. Q.} and X. Sun and Liu, {Z. G.} and Sharon Cui and Ma, {T. P.} and Lior Kornblum and Moshe Eizenberg",

year = "2010",

doi = "10.1109/DRC.2010.5551969",

language = "英语",

isbn = "9781424478705",

series = "Device Research Conference - Conference Digest, DRC",

pages = "261--262",

booktitle = "68th Device Research Conference, DRC 2010",

note = "68th Device Research Conference, DRC 2010 ; Conference date: 21-06-2010 Through 23-06-2010",

}

Peng, CY, Zhang, WQ, Sun, X, Liu, ZG, Cui, S, Ma, TP, Kornblum, L & Eizenberg, M 2010, A charge-trapping memory structure featuring low-voltage high-speed operation and 250°C retention. in 68th Device Research Conference, DRC 2010., 5551969, Device Research Conference - Conference Digest, DRC, pp. 261-262, 68th Device Research Conference, DRC 2010, Notre Dame, IN, United States, 21/06/10. https://doi.org/10.1109/DRC.2010.5551969

A charge-trapping memory structure featuring low-voltage high-speed operation and 250°C retention. / Peng, C. Y.; Zhang, W. Q.; Sun, X. et al.
68th Device Research Conference, DRC 2010. 2010. p. 261-262 5551969 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A charge-trapping memory structure featuring low-voltage high-speed operation and 250°C retention

AU - Peng, C. Y.

AU - Zhang, W. Q.

AU - Sun, X.

AU - Liu, Z. G.

AU - Cui, Sharon

AU - Ma, T. P.

AU - Kornblum, Lior

AU - Eizenberg, Moshe

PY - 2010

Y1 - 2010

N2 - We have demonstrated that MAD-Al2O3 is an excellent candidate for the tunnel, as well as for the blocking dielectrics in NAND-type memories. Despite the limited minority carrier generation rate, the MANAS capacitors have already demonstrated superb memory characteristics, especially the 250C retention, which we believe is exceptional and unprecedented. The process simplicity is also an attractive feature, making the MANAS structure viable for future generations of non-volatile memories.

AB - We have demonstrated that MAD-Al2O3 is an excellent candidate for the tunnel, as well as for the blocking dielectrics in NAND-type memories. Despite the limited minority carrier generation rate, the MANAS capacitors have already demonstrated superb memory characteristics, especially the 250C retention, which we believe is exceptional and unprecedented. The process simplicity is also an attractive feature, making the MANAS structure viable for future generations of non-volatile memories.

UR - http://www.scopus.com/inward/record.url?scp=77957553253&partnerID=8YFLogxK

U2 - 10.1109/DRC.2010.5551969

DO - 10.1109/DRC.2010.5551969

M3 - 会议稿件

AN - SCOPUS:77957553253

SN - 9781424478705

T3 - Device Research Conference - Conference Digest, DRC

SP - 261

EP - 262

BT - 68th Device Research Conference, DRC 2010

T2 - 68th Device Research Conference, DRC 2010

Y2 - 21 June 2010 through 23 June 2010

ER -

A charge-trapping memory structure featuring low-voltage high-speed operation and 250°C retention

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this