硒化温度对CIGS/Mo界面微观结构和化学成分的影响

Qi Yuan; Limei Cha; Wenquan Ming; Xiubo Yang; Shiyong Li; Junfeng Han

doi:10.11896/j.issn.1005-023X.2018.11.003

硒化温度对CIGS/Mo界面微观结构和化学成分的影响

Translated title of the contribution: Influences of the Selenization Temperature on the Microstructures and Chemical Compositions of CIGS/Mo Interface

Qi Yuan, Limei Cha^*, Wenquan Ming, Xiubo Yang, Shiyong Li, Junfeng Han

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

CuIn_xGa_1-xSe₂ (CIGS) films were deposited on soda-lime glass by magnetron sputtering and selenization heat treatments. X-ray diffraction (XRD), high resolution transmission microscopy (HR-TEM), high-angle annular dark field (HAADF) image and X-ray energy dispersive spectrum (EDS) mapping were utilized to analyze the influence of selenization temperature on the characters of CIGS/Mo interface. It was found that CIGS/Mo interface was clear when the selenization temperature was 400℃. A MoSe₂ thin layer and Na-riched second phase nanoparticles were detected at CIGS/Mo interface at 500℃. The MoSe₂ layer became thicker and the Na-riched nanoparticles grew into a curved band at 600℃, therefore the CIGS/Mo interface developed into a multilayered structure of CIGS/Na-riched second phase/MoSe₂/Mo. In addition, the orientations of MoSe₂ grains may effect on the formation of second phases.

Translated title of the contribution	Influences of the Selenization Temperature on the Microstructures and Chemical Compositions of CIGS/Mo Interface
Original language	Chinese (Simplified)
Pages (from-to)	1787-1790 and 1819
Journal	Cailiao Daobao/Materials Review
Volume	32
Issue number	6
DOIs	https://doi.org/10.11896/j.issn.1005-023X.2018.11.003
State	Published - 10 Jun 2018
Externally published	Yes

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title = "硒化温度对CIGS/Mo界面微观结构和化学成分的影响",

abstract = "CuInxGa1-xSe2 (CIGS) films were deposited on soda-lime glass by magnetron sputtering and selenization heat treatments. X-ray diffraction (XRD), high resolution transmission microscopy (HR-TEM), high-angle annular dark field (HAADF) image and X-ray energy dispersive spectrum (EDS) mapping were utilized to analyze the influence of selenization temperature on the characters of CIGS/Mo interface. It was found that CIGS/Mo interface was clear when the selenization temperature was 400℃. A MoSe2 thin layer and Na-riched second phase nanoparticles were detected at CIGS/Mo interface at 500℃. The MoSe2 layer became thicker and the Na-riched nanoparticles grew into a curved band at 600℃, therefore the CIGS/Mo interface developed into a multilayered structure of CIGS/Na-riched second phase/MoSe2/Mo. In addition, the orientations of MoSe2 grains may effect on the formation of second phases.",

keywords = "Composition, CuInGaSe, Film, Interface, Microstructure",

author = "Qi Yuan and Limei Cha and Wenquan Ming and Xiubo Yang and Shiyong Li and Junfeng Han",

year = "2018",

month = jun,

day = "10",

doi = "10.11896/j.issn.1005-023X.2018.11.003",

language = "繁体中文",

volume = "32",

pages = "1787--1790 and 1819",

journal = "Cailiao Daobao/Materials Review",

issn = "1005-023X",

publisher = "Cailiao Daobaoshe/ Materials Review",

number = "6",

}

TY - JOUR

T1 - 硒化温度对CIGS/Mo界面微观结构和化学成分的影响

AU - Yuan, Qi

AU - Cha, Limei

AU - Ming, Wenquan

AU - Yang, Xiubo

AU - Li, Shiyong

AU - Han, Junfeng

PY - 2018/6/10

Y1 - 2018/6/10

N2 - CuInxGa1-xSe2 (CIGS) films were deposited on soda-lime glass by magnetron sputtering and selenization heat treatments. X-ray diffraction (XRD), high resolution transmission microscopy (HR-TEM), high-angle annular dark field (HAADF) image and X-ray energy dispersive spectrum (EDS) mapping were utilized to analyze the influence of selenization temperature on the characters of CIGS/Mo interface. It was found that CIGS/Mo interface was clear when the selenization temperature was 400℃. A MoSe2 thin layer and Na-riched second phase nanoparticles were detected at CIGS/Mo interface at 500℃. The MoSe2 layer became thicker and the Na-riched nanoparticles grew into a curved band at 600℃, therefore the CIGS/Mo interface developed into a multilayered structure of CIGS/Na-riched second phase/MoSe2/Mo. In addition, the orientations of MoSe2 grains may effect on the formation of second phases.

AB - CuInxGa1-xSe2 (CIGS) films were deposited on soda-lime glass by magnetron sputtering and selenization heat treatments. X-ray diffraction (XRD), high resolution transmission microscopy (HR-TEM), high-angle annular dark field (HAADF) image and X-ray energy dispersive spectrum (EDS) mapping were utilized to analyze the influence of selenization temperature on the characters of CIGS/Mo interface. It was found that CIGS/Mo interface was clear when the selenization temperature was 400℃. A MoSe2 thin layer and Na-riched second phase nanoparticles were detected at CIGS/Mo interface at 500℃. The MoSe2 layer became thicker and the Na-riched nanoparticles grew into a curved band at 600℃, therefore the CIGS/Mo interface developed into a multilayered structure of CIGS/Na-riched second phase/MoSe2/Mo. In addition, the orientations of MoSe2 grains may effect on the formation of second phases.

KW - Composition

KW - CuInGaSe

KW - Film

KW - Interface

KW - Microstructure

UR - http://www.scopus.com/inward/record.url?scp=85056637887&partnerID=8YFLogxK

U2 - 10.11896/j.issn.1005-023X.2018.11.003

DO - 10.11896/j.issn.1005-023X.2018.11.003

M3 - 文章

AN - SCOPUS:85056637887

SN - 1005-023X

VL - 32

SP - 1787-1790 and 1819

JO - Cailiao Daobao/Materials Review

JF - Cailiao Daobao/Materials Review

IS - 6

ER -

硒化温度对CIGS/Mo界面微观结构和化学成分的影响

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