Zero temperature coefficient of resistance in back-end-of-the-line compatible titanium aluminum nitride films by atomic layer deposition

Igor Krylov; Yuanshen Qi; Valentina Korchnoy; Kamira Weinfeld; Moshe Eizenberg; Eilam Yalon

doi:10.1063/5.0012739

Zero temperature coefficient of resistance in back-end-of-the-line compatible titanium aluminum nitride films by atomic layer deposition

Igor Krylov^*, Yuanshen Qi, Valentina Korchnoy, Kamira Weinfeld, Moshe Eizenberg, Eilam Yalon

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Thin film resistors with near-zero temperature coefficient of resistance (TCR) are key passive elements in analog integrated circuits (ICs). State-of-the-art near-zero TCR technology is based on sputtered compounds of Si, Cr, B, and C, which require annealing at temperatures higher than 500 °C, making it incompatible with back-end-of-the-line (BEOL) processes. We report here that near-zero TCR resistors can be obtained by atomic layer deposition (ALD) of TiN-AlN nano-laminates at BEOL-compatible deposition temperature. The resistivity and the TCR can be tuned by varying the ratio between AlN (insulating) and TiN (metallic) in the TiXAl1-XN thin film. The TCR changes from positive to negative as the AlN content is increased, allowing for optimization to zero TCR. The ALD method provides ultimate control of the thickness, composition ratio, coverage, and uniformity. Microstructure analysis shows that the film consists of metallic TiN crystallites embedded in the semiconducting TiyAl1-yN amorphous matrix, suggesting that the electrical behavior is similar to that of SiCr-based compounds. These results pave the way toward BEOL-compatible near-zero TCR thin film resistors, which can significantly reduce capacitance and minimize design complexity of passive analog IC components.

Original language	English
Article number	0012739
Journal	Applied Physics Letters
Volume	117
Issue number	4
DOIs	https://doi.org/10.1063/5.0012739
State	Published - 27 Jul 2020
Externally published	Yes

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title = "Zero temperature coefficient of resistance in back-end-of-the-line compatible titanium aluminum nitride films by atomic layer deposition",

abstract = "Thin film resistors with near-zero temperature coefficient of resistance (TCR) are key passive elements in analog integrated circuits (ICs). State-of-the-art near-zero TCR technology is based on sputtered compounds of Si, Cr, B, and C, which require annealing at temperatures higher than 500 °C, making it incompatible with back-end-of-the-line (BEOL) processes. We report here that near-zero TCR resistors can be obtained by atomic layer deposition (ALD) of TiN-AlN nano-laminates at BEOL-compatible deposition temperature. The resistivity and the TCR can be tuned by varying the ratio between AlN (insulating) and TiN (metallic) in the TiXAl1-XN thin film. The TCR changes from positive to negative as the AlN content is increased, allowing for optimization to zero TCR. The ALD method provides ultimate control of the thickness, composition ratio, coverage, and uniformity. Microstructure analysis shows that the film consists of metallic TiN crystallites embedded in the semiconducting TiyAl1-yN amorphous matrix, suggesting that the electrical behavior is similar to that of SiCr-based compounds. These results pave the way toward BEOL-compatible near-zero TCR thin film resistors, which can significantly reduce capacitance and minimize design complexity of passive analog IC components.",

author = "Igor Krylov and Yuanshen Qi and Valentina Korchnoy and Kamira Weinfeld and Moshe Eizenberg and Eilam Yalon",

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AU - Krylov, Igor

AU - Qi, Yuanshen

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AU - Weinfeld, Kamira

AU - Eizenberg, Moshe

AU - Yalon, Eilam

PY - 2020/7/27

Y1 - 2020/7/27

N2 - Thin film resistors with near-zero temperature coefficient of resistance (TCR) are key passive elements in analog integrated circuits (ICs). State-of-the-art near-zero TCR technology is based on sputtered compounds of Si, Cr, B, and C, which require annealing at temperatures higher than 500 °C, making it incompatible with back-end-of-the-line (BEOL) processes. We report here that near-zero TCR resistors can be obtained by atomic layer deposition (ALD) of TiN-AlN nano-laminates at BEOL-compatible deposition temperature. The resistivity and the TCR can be tuned by varying the ratio between AlN (insulating) and TiN (metallic) in the TiXAl1-XN thin film. The TCR changes from positive to negative as the AlN content is increased, allowing for optimization to zero TCR. The ALD method provides ultimate control of the thickness, composition ratio, coverage, and uniformity. Microstructure analysis shows that the film consists of metallic TiN crystallites embedded in the semiconducting TiyAl1-yN amorphous matrix, suggesting that the electrical behavior is similar to that of SiCr-based compounds. These results pave the way toward BEOL-compatible near-zero TCR thin film resistors, which can significantly reduce capacitance and minimize design complexity of passive analog IC components.

AB - Thin film resistors with near-zero temperature coefficient of resistance (TCR) are key passive elements in analog integrated circuits (ICs). State-of-the-art near-zero TCR technology is based on sputtered compounds of Si, Cr, B, and C, which require annealing at temperatures higher than 500 °C, making it incompatible with back-end-of-the-line (BEOL) processes. We report here that near-zero TCR resistors can be obtained by atomic layer deposition (ALD) of TiN-AlN nano-laminates at BEOL-compatible deposition temperature. The resistivity and the TCR can be tuned by varying the ratio between AlN (insulating) and TiN (metallic) in the TiXAl1-XN thin film. The TCR changes from positive to negative as the AlN content is increased, allowing for optimization to zero TCR. The ALD method provides ultimate control of the thickness, composition ratio, coverage, and uniformity. Microstructure analysis shows that the film consists of metallic TiN crystallites embedded in the semiconducting TiyAl1-yN amorphous matrix, suggesting that the electrical behavior is similar to that of SiCr-based compounds. These results pave the way toward BEOL-compatible near-zero TCR thin film resistors, which can significantly reduce capacitance and minimize design complexity of passive analog IC components.

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Zero temperature coefficient of resistance in back-end-of-the-line compatible titanium aluminum nitride films by atomic layer deposition

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