TY - JOUR
T1 - W and W/WSi/In1-xAlxN ohmic contacts to n-type GaN
AU - Zeitouny, A.
AU - Eizenberg, M.
AU - Pearton, S. J.
AU - Ren, F.
N1 - Funding Information:
This research was supported by the Fund for the Promotion of Research at the Technion-Israel Institute of Technology.
PY - 1999/5/6
Y1 - 1999/5/6
N2 - Two approaches are investigated in order to obtain good stable ohmic contacts to u-type GaN. In the first one the ohmic contact is enabled by depositing W on an n+-GaN region produced by Si implantation. The contacts were RTA treated at 750, 850, 950, and 1050°C for 10 s. The 750, 950 and 1050°C anneals produced good ohmic contacts with contact resistivities ranging from 2.6·10-6 to 1.1·10-4 Ωcm2, as measured by the transmission line model technique, while the 850°C anneal produced leaky rectifying diodes. In the second approach, a graded In1-xAlxN epilayer facilitates the proper band alignment needed for an ohmic contact. In order to test the feasibility of this approach a stack of 500 angstrom W/500 angstrom WSi/3500 angstrom n+-In1-xAlxN/AlN with x = 0, 0.27 and 0.46 was deposited on sapphire and RTA treated at temperatures up to 700°C. Contact resistivity values of 1·10-6 to 1·10-5 Ωcm2 were obtained. The contact resistivity increased as the annealing temperature increased.
AB - Two approaches are investigated in order to obtain good stable ohmic contacts to u-type GaN. In the first one the ohmic contact is enabled by depositing W on an n+-GaN region produced by Si implantation. The contacts were RTA treated at 750, 850, 950, and 1050°C for 10 s. The 750, 950 and 1050°C anneals produced good ohmic contacts with contact resistivities ranging from 2.6·10-6 to 1.1·10-4 Ωcm2, as measured by the transmission line model technique, while the 850°C anneal produced leaky rectifying diodes. In the second approach, a graded In1-xAlxN epilayer facilitates the proper band alignment needed for an ohmic contact. In order to test the feasibility of this approach a stack of 500 angstrom W/500 angstrom WSi/3500 angstrom n+-In1-xAlxN/AlN with x = 0, 0.27 and 0.46 was deposited on sapphire and RTA treated at temperatures up to 700°C. Contact resistivity values of 1·10-6 to 1·10-5 Ωcm2 were obtained. The contact resistivity increased as the annealing temperature increased.
UR - http://www.scopus.com/inward/record.url?scp=0033528892&partnerID=8YFLogxK
U2 - 10.1016/S0921-5107(98)00383-3
DO - 10.1016/S0921-5107(98)00383-3
M3 - 会议文章
AN - SCOPUS:0033528892
SN - 0921-5107
VL - 59
SP - 358
EP - 361
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
IS - 1-3
T2 - Proceedings of the 1998 Symposium L: on Nitrides and Related Wide Band Gap Materials (E-MRS Meeting)
Y2 - 16 June 1998 through 19 June 1998
ER -