W and WSix Ohmic contacts on p- and n-type GaN

X. A. Cao; F. Ren; S. J. Pearton; A. Zeitouny; M. Eizenberg; J. C. Zolper; C. R. Abernathy; J. Han; R. J. Shul; J. R. Lothian

doi:10.1116/1.581799

W and WSi_x Ohmic contacts on p- and n-type GaN

X. A. Cao^*, F. Ren, S. J. Pearton, A. Zeitouny, M. Eizenberg, J. C. Zolper, C. R. Abernathy, J. Han, R. J. Shul, J. R. Lothian

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

W and WSi Ohmic contacts on both p- and n-type GaN have been annealed at temperatures from 300 to 1000°C. There is minimal reaction (≤100 Å broadening of the metal/GaN interface) even at 1000°C. Specific contact resistances in the 10^-5 Ω cm² range are obtained for WSi_x on Si-implanted GaN with a peak doping concentration of ∼5× 10²⁰ cm^-3, after annealing at 950°C. On p-GaN, leaky Schottky diode behavior is observed for W, WSi_x and Ni/Au contacts at room temperature, but true Ohmic characteristics are obtained at 250-300°C, where the specific contact resistances are, typically, in the 10^-2 Ω cm² range. The best contacts for W and WSi_x are obtained after 700°C annealing for periods of 30-120 s. The formation of β- W₂N interfacial phases appear to be important in determining the contact quality.

Original language	English
Pages (from-to)	1221-1225
Number of pages	5
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	17
Issue number	4
DOIs	https://doi.org/10.1116/1.581799
State	Published - 1999
Externally published	Yes

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title = "W and WSix Ohmic contacts on p- and n-type GaN",

abstract = "W and WSi Ohmic contacts on both p- and n-type GaN have been annealed at temperatures from 300 to 1000°C. There is minimal reaction (≤100 {\AA} broadening of the metal/GaN interface) even at 1000°C. Specific contact resistances in the 10-5 Ω cm2 range are obtained for WSix on Si-implanted GaN with a peak doping concentration of ∼5× 1020 cm-3, after annealing at 950°C. On p-GaN, leaky Schottky diode behavior is observed for W, WSix and Ni/Au contacts at room temperature, but true Ohmic characteristics are obtained at 250-300°C, where the specific contact resistances are, typically, in the 10-2 Ω cm2 range. The best contacts for W and WSix are obtained after 700°C annealing for periods of 30-120 s. The formation of β- W2N interfacial phases appear to be important in determining the contact quality.",

author = "Cao, {X. A.} and F. Ren and Pearton, {S. J.} and A. Zeitouny and M. Eizenberg and Zolper, {J. C.} and Abernathy, {C. R.} and J. Han and Shul, {R. J.} and Lothian, {J. R.}",

year = "1999",

doi = "10.1116/1.581799",

language = "英语",

volume = "17",

pages = "1221--1225",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

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TY - JOUR

T1 - W and WSix Ohmic contacts on p- and n-type GaN

AU - Cao, X. A.

AU - Ren, F.

AU - Pearton, S. J.

AU - Zeitouny, A.

AU - Eizenberg, M.

AU - Zolper, J. C.

AU - Abernathy, C. R.

AU - Han, J.

AU - Shul, R. J.

AU - Lothian, J. R.

PY - 1999

Y1 - 1999

N2 - W and WSi Ohmic contacts on both p- and n-type GaN have been annealed at temperatures from 300 to 1000°C. There is minimal reaction (≤100 Å broadening of the metal/GaN interface) even at 1000°C. Specific contact resistances in the 10-5 Ω cm2 range are obtained for WSix on Si-implanted GaN with a peak doping concentration of ∼5× 1020 cm-3, after annealing at 950°C. On p-GaN, leaky Schottky diode behavior is observed for W, WSix and Ni/Au contacts at room temperature, but true Ohmic characteristics are obtained at 250-300°C, where the specific contact resistances are, typically, in the 10-2 Ω cm2 range. The best contacts for W and WSix are obtained after 700°C annealing for periods of 30-120 s. The formation of β- W2N interfacial phases appear to be important in determining the contact quality.

AB - W and WSi Ohmic contacts on both p- and n-type GaN have been annealed at temperatures from 300 to 1000°C. There is minimal reaction (≤100 Å broadening of the metal/GaN interface) even at 1000°C. Specific contact resistances in the 10-5 Ω cm2 range are obtained for WSix on Si-implanted GaN with a peak doping concentration of ∼5× 1020 cm-3, after annealing at 950°C. On p-GaN, leaky Schottky diode behavior is observed for W, WSix and Ni/Au contacts at room temperature, but true Ohmic characteristics are obtained at 250-300°C, where the specific contact resistances are, typically, in the 10-2 Ω cm2 range. The best contacts for W and WSix are obtained after 700°C annealing for periods of 30-120 s. The formation of β- W2N interfacial phases appear to be important in determining the contact quality.

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DO - 10.1116/1.581799

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SN - 0734-2101

VL - 17

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EP - 1225

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 4

ER -

W and WSi_x Ohmic contacts on p- and n-type GaN

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