Unusual strain relaxation in SiGe/Si heterostructures

M. Lyakas; D. Parnis; W. D. Kaplan; E. Zolotoyabko; M. Eizenberg; V. Demuth; H. P. Strunk

doi:10.1063/1.118553

Unusual strain relaxation in SiGe/Si heterostructures

M. Lyakas^*, D. Parnis, W. D. Kaplan, E. Zolotoyabko, M. Eizenberg, V. Demuth, H. P. Strunk

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Si_1-xGe_x films (x = 0.22) epitaxially grown by ion beam-sputter deposition on (001) Si substrates were subjected to rapid and conventional thermal annealings at different temperatures. Strain measurements carried out by means of high-resolution x-ray diffraction exhibited strongly nonmonotonous strain dependencies on the annealing time. We observed short-time and long-time relaxation modes with activation energies of 4.6 and 1.3 eV, respectively, and unexpectedly, an additional mode of strain recovery at intermediate time durations with an activation energy of 1.6 eV. This behavior was attributed to processes that involve {113} two-dimensional defects, i.e., agglomerates of interstitials, which were identified by means of transmission electron microscopy.

Original language	English
Pages (from-to)	1287-1289
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	10
DOIs	https://doi.org/10.1063/1.118553
State	Published - 10 Mar 1997
Externally published	Yes

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title = "Unusual strain relaxation in SiGe/Si heterostructures",

abstract = "Si1-xGex films (x = 0.22) epitaxially grown by ion beam-sputter deposition on (001) Si substrates were subjected to rapid and conventional thermal annealings at different temperatures. Strain measurements carried out by means of high-resolution x-ray diffraction exhibited strongly nonmonotonous strain dependencies on the annealing time. We observed short-time and long-time relaxation modes with activation energies of 4.6 and 1.3 eV, respectively, and unexpectedly, an additional mode of strain recovery at intermediate time durations with an activation energy of 1.6 eV. This behavior was attributed to processes that involve {113} two-dimensional defects, i.e., agglomerates of interstitials, which were identified by means of transmission electron microscopy.",

author = "M. Lyakas and D. Parnis and Kaplan, {W. D.} and E. Zolotoyabko and M. Eizenberg and V. Demuth and Strunk, {H. P.}",

year = "1997",

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doi = "10.1063/1.118553",

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volume = "70",

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T1 - Unusual strain relaxation in SiGe/Si heterostructures

AU - Lyakas, M.

AU - Parnis, D.

AU - Kaplan, W. D.

AU - Zolotoyabko, E.

AU - Eizenberg, M.

AU - Demuth, V.

AU - Strunk, H. P.

PY - 1997/3/10

Y1 - 1997/3/10

N2 - Si1-xGex films (x = 0.22) epitaxially grown by ion beam-sputter deposition on (001) Si substrates were subjected to rapid and conventional thermal annealings at different temperatures. Strain measurements carried out by means of high-resolution x-ray diffraction exhibited strongly nonmonotonous strain dependencies on the annealing time. We observed short-time and long-time relaxation modes with activation energies of 4.6 and 1.3 eV, respectively, and unexpectedly, an additional mode of strain recovery at intermediate time durations with an activation energy of 1.6 eV. This behavior was attributed to processes that involve {113} two-dimensional defects, i.e., agglomerates of interstitials, which were identified by means of transmission electron microscopy.

AB - Si1-xGex films (x = 0.22) epitaxially grown by ion beam-sputter deposition on (001) Si substrates were subjected to rapid and conventional thermal annealings at different temperatures. Strain measurements carried out by means of high-resolution x-ray diffraction exhibited strongly nonmonotonous strain dependencies on the annealing time. We observed short-time and long-time relaxation modes with activation energies of 4.6 and 1.3 eV, respectively, and unexpectedly, an additional mode of strain recovery at intermediate time durations with an activation energy of 1.6 eV. This behavior was attributed to processes that involve {113} two-dimensional defects, i.e., agglomerates of interstitials, which were identified by means of transmission electron microscopy.

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DO - 10.1063/1.118553

M3 - 文章

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VL - 70

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EP - 1289

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Unusual strain relaxation in SiGe/Si heterostructures

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