Two-step Al/Ti metallization to PtSi/Si structures

M. Eizenberg; K. N. Tu; C. J. Palmstrøm; J. W. Mayer

doi:10.1063/1.95409

Two-step Al/Ti metallization to PtSi/Si structures

M. Eizenberg^*, K. N. Tu, C. J. Palmstrøm, J. W. Mayer

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

A two-step Al metallization procedure to prevent Al degradation of PtSi/Si Schottky barrier characteristics has been evaluated using Al₃Ti as the kinetic barrier to the consumption of Ti. In the first step a thin Al layer is deposited on a Ti layer on PtSi/Si and is heated to the standard metallization process temperature of 450-500°C. The Al and Ti thicknesses are chosen so that the Al is consumed to form Al₃Ti with Ti remaining between the aluminide and silicide. In the second step a thick layer of Al, compatible with interconnect requirements, is deposited and annealed at temperatures around 350°C. The formation rate of Al₃Ti at this temperature is sufficiently low that consumption of Ti is minimal and the electrical characteristic of the PtSi/Si contact is preserved.

Original language	English
Pages (from-to)	905-907
Number of pages	3
Journal	Applied Physics Letters
Volume	45
Issue number	8
DOIs	https://doi.org/10.1063/1.95409
State	Published - 1984
Externally published	Yes

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@article{2e96c941cd4a4d8d9efe3190bff6797b,

title = "Two-step Al/Ti metallization to PtSi/Si structures",

abstract = "A two-step Al metallization procedure to prevent Al degradation of PtSi/Si Schottky barrier characteristics has been evaluated using Al3Ti as the kinetic barrier to the consumption of Ti. In the first step a thin Al layer is deposited on a Ti layer on PtSi/Si and is heated to the standard metallization process temperature of 450-500°C. The Al and Ti thicknesses are chosen so that the Al is consumed to form Al3Ti with Ti remaining between the aluminide and silicide. In the second step a thick layer of Al, compatible with interconnect requirements, is deposited and annealed at temperatures around 350°C. The formation rate of Al3Ti at this temperature is sufficiently low that consumption of Ti is minimal and the electrical characteristic of the PtSi/Si contact is preserved.",

author = "M. Eizenberg and Tu, {K. N.} and Palmstr{\o}m, {C. J.} and Mayer, {J. W.}",

year = "1984",

doi = "10.1063/1.95409",

language = "英语",

volume = "45",

pages = "905--907",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Two-step Al/Ti metallization to PtSi/Si structures

AU - Eizenberg, M.

AU - Tu, K. N.

AU - Palmstrøm, C. J.

AU - Mayer, J. W.

PY - 1984

Y1 - 1984

N2 - A two-step Al metallization procedure to prevent Al degradation of PtSi/Si Schottky barrier characteristics has been evaluated using Al3Ti as the kinetic barrier to the consumption of Ti. In the first step a thin Al layer is deposited on a Ti layer on PtSi/Si and is heated to the standard metallization process temperature of 450-500°C. The Al and Ti thicknesses are chosen so that the Al is consumed to form Al3Ti with Ti remaining between the aluminide and silicide. In the second step a thick layer of Al, compatible with interconnect requirements, is deposited and annealed at temperatures around 350°C. The formation rate of Al3Ti at this temperature is sufficiently low that consumption of Ti is minimal and the electrical characteristic of the PtSi/Si contact is preserved.

AB - A two-step Al metallization procedure to prevent Al degradation of PtSi/Si Schottky barrier characteristics has been evaluated using Al3Ti as the kinetic barrier to the consumption of Ti. In the first step a thin Al layer is deposited on a Ti layer on PtSi/Si and is heated to the standard metallization process temperature of 450-500°C. The Al and Ti thicknesses are chosen so that the Al is consumed to form Al3Ti with Ti remaining between the aluminide and silicide. In the second step a thick layer of Al, compatible with interconnect requirements, is deposited and annealed at temperatures around 350°C. The formation rate of Al3Ti at this temperature is sufficiently low that consumption of Ti is minimal and the electrical characteristic of the PtSi/Si contact is preserved.

UR - http://www.scopus.com/inward/record.url?scp=0021510917&partnerID=8YFLogxK

U2 - 10.1063/1.95409

DO - 10.1063/1.95409

M3 - 文章

AN - SCOPUS:0021510917

SN - 0003-6951

VL - 45

SP - 905

EP - 907

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

Two-step Al/Ti metallization to PtSi/Si structures

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