Tuning of Fermi level position at HfNx / SiO2 interface

J. A. Rothschild; M. Eizenberg

doi:10.1063/1.3089818

Tuning of Fermi level position at HfN_x / SiO₂ interface

J. A. Rothschild, M. Eizenberg

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We demonstrate that the vacuum work function of HfN_x, as measured in situ by Kelvin probe, can be tailored on the entire silicon band gap by changing the nitrogen content of the HfN_x alloy. We observed an increase in the effective work function of HfN_x on SiO₂, extracted from capacitance-voltage measurements, only for x<1, and saturation is reached at a value of 4.6 eV for x>1. The measured value of the effective work function for pure Hf (4.1 eV) can be explained by the metal induced gap states model, while the HfN_x behavior is explained by oxidation at the HfN_x / SiO₂ interface.

Original language	English
Article number	081905
Journal	Applied Physics Letters
Volume	94
Issue number	8
DOIs	https://doi.org/10.1063/1.3089818
State	Published - 2009
Externally published	Yes

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title = "Tuning of Fermi level position at HfNx / SiO2 interface",

abstract = "We demonstrate that the vacuum work function of HfNx, as measured in situ by Kelvin probe, can be tailored on the entire silicon band gap by changing the nitrogen content of the HfNx alloy. We observed an increase in the effective work function of HfNx on SiO2, extracted from capacitance-voltage measurements, only for x<1, and saturation is reached at a value of 4.6 eV for x>1. The measured value of the effective work function for pure Hf (4.1 eV) can be explained by the metal induced gap states model, while the HfNx behavior is explained by oxidation at the HfNx / SiO2 interface.",

author = "Rothschild, {J. A.} and M. Eizenberg",

note = "Funding Information: We acknowledge the support of Intel Israel and the Russel Berrie Nanotechnology Institute at Technion. We thank Dr. R. Brenner and C. Cytermann from the Solid State Institute at Technion for XPS and TOF-SIMS measurements, Dr. A. Kellock from IBM (Almaden Laboratories) for RBS measurements, Dr. G. Frant from Materials Engineering Department at Technion for sputtering, and Y. Moses for constructing the in situ KP measurement system.",

year = "2009",

doi = "10.1063/1.3089818",

language = "英语",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Tuning of Fermi level position at HfNx / SiO2 interface

AU - Rothschild, J. A.

AU - Eizenberg, M.

N1 - Funding Information: We acknowledge the support of Intel Israel and the Russel Berrie Nanotechnology Institute at Technion. We thank Dr. R. Brenner and C. Cytermann from the Solid State Institute at Technion for XPS and TOF-SIMS measurements, Dr. A. Kellock from IBM (Almaden Laboratories) for RBS measurements, Dr. G. Frant from Materials Engineering Department at Technion for sputtering, and Y. Moses for constructing the in situ KP measurement system.

PY - 2009

Y1 - 2009

N2 - We demonstrate that the vacuum work function of HfNx, as measured in situ by Kelvin probe, can be tailored on the entire silicon band gap by changing the nitrogen content of the HfNx alloy. We observed an increase in the effective work function of HfNx on SiO2, extracted from capacitance-voltage measurements, only for x<1, and saturation is reached at a value of 4.6 eV for x>1. The measured value of the effective work function for pure Hf (4.1 eV) can be explained by the metal induced gap states model, while the HfNx behavior is explained by oxidation at the HfNx / SiO2 interface.

AB - We demonstrate that the vacuum work function of HfNx, as measured in situ by Kelvin probe, can be tailored on the entire silicon band gap by changing the nitrogen content of the HfNx alloy. We observed an increase in the effective work function of HfNx on SiO2, extracted from capacitance-voltage measurements, only for x<1, and saturation is reached at a value of 4.6 eV for x>1. The measured value of the effective work function for pure Hf (4.1 eV) can be explained by the metal induced gap states model, while the HfNx behavior is explained by oxidation at the HfNx / SiO2 interface.

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U2 - 10.1063/1.3089818

DO - 10.1063/1.3089818

M3 - 文章

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VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Tuning of Fermi level position at HfN_x / SiO₂ interface

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