Trap-assisted conduction in Pt-gated Gd2O3/Si capacitors

E. Lipp*, Z. Shahar, B. C. Bittel, P. M. Lenahan, D. Schwendt, H. J. Osten, M. Eizenberg

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

The barrier height at the Pt/Gd2O3 interface is determined by current-voltage measurements. Current conduction is found to be governed by carrier injection from the electrode, with a barrier height of 0.6 0.1 eV. This value, which was verified by the method suggested by Zafar [Appl. Phys. Lett. 80, 4858 (2002)], is much smaller than the difference between the metal work function (5.6 eV) and the oxide electron affinity (1.95-2.05 eV). As Fermi-level pinning is not dominant at Pt/Gd2O3 interfaces, it is proposed that electrons are injected into a defect-related energy band in the oxide. The existence of such a defect, as well as its position in the oxide forbidden energy bandgap, agrees with results obtained by magnetic resonance measurements.

Original languageEnglish
Article number073724
JournalJournal of Applied Physics
Volume109
Issue number7
DOIs
StatePublished - 1 Apr 2011
Externally publishedYes

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