Trap-assisted conduction in Pt-gated Gd2O3/Si capacitors

E. Lipp*, Z. Shahar, B. C. Bittel, P. M. Lenahan, D. Schwendt, H. J. Osten, M. Eizenberg

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations


The barrier height at the Pt/Gd2O3 interface is determined by current-voltage measurements. Current conduction is found to be governed by carrier injection from the electrode, with a barrier height of 0.6 0.1 eV. This value, which was verified by the method suggested by Zafar [Appl. Phys. Lett. 80, 4858 (2002)], is much smaller than the difference between the metal work function (5.6 eV) and the oxide electron affinity (1.95-2.05 eV). As Fermi-level pinning is not dominant at Pt/Gd2O3 interfaces, it is proposed that electrons are injected into a defect-related energy band in the oxide. The existence of such a defect, as well as its position in the oxide forbidden energy bandgap, agrees with results obtained by magnetic resonance measurements.

Original languageEnglish
Article number073724
JournalJournal of Applied Physics
Issue number7
StatePublished - 1 Apr 2011
Externally publishedYes


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