Titania/alumina bilayer gate insulators for InGaAs metal-oxide- semiconductor devices

Jaesoo Ahn; Irina Geppert; Marika Gunji; Martin Holland; Iain Thayne; Moshe Eizenberg; Paul C. McIntyre

doi:10.1063/1.3662966

Titania/alumina bilayer gate insulators for InGaAs metal-oxide- semiconductor devices

Jaesoo Ahn, Irina Geppert, Marika Gunji, Martin Holland, Iain Thayne, Moshe Eizenberg, Paul C. McIntyre^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

We describe the electrical properties of atomic layer deposited TiO ₂/Al ₂O ₃ bilayer gate oxides which simultaneously achieve high gate capacitance density and low gate leakage current density. Crystallization of the initially amorphous TiO ₂ film contributes to a significant accumulation capacitance increase (∼33) observed after a forming gas anneal at 400°C. The bilayer dielectrics reduce gate leakage current density by approximately one order of magnitude at flatband compared to Al ₂O ₃ single layer of comparable capacitance equivalent thickness. The conduction band offset of TiO ₂ relative to InGaAs is 0.6 eV, contributing to the ability of the stacked dielectric to suppress gate leakage conduction.

Original language	English
Article number	232902
Journal	Applied Physics Letters
Volume	99
Issue number	23
DOIs	https://doi.org/10.1063/1.3662966
State	Published - 5 Dec 2011
Externally published	Yes

Access to Document

10.1063/1.3662966

Cite this

@article{7357ff101f34424fb36e7cc098c4554d,

title = "Titania/alumina bilayer gate insulators for InGaAs metal-oxide- semiconductor devices",

abstract = "We describe the electrical properties of atomic layer deposited TiO 2/Al 2O 3 bilayer gate oxides which simultaneously achieve high gate capacitance density and low gate leakage current density. Crystallization of the initially amorphous TiO 2 film contributes to a significant accumulation capacitance increase (∼33) observed after a forming gas anneal at 400°C. The bilayer dielectrics reduce gate leakage current density by approximately one order of magnitude at flatband compared to Al 2O 3 single layer of comparable capacitance equivalent thickness. The conduction band offset of TiO 2 relative to InGaAs is 0.6 eV, contributing to the ability of the stacked dielectric to suppress gate leakage conduction.",

author = "Jaesoo Ahn and Irina Geppert and Marika Gunji and Martin Holland and Iain Thayne and Moshe Eizenberg and McIntyre, {Paul C.}",

note = "Funding Information: The authors acknowledge support from Semiconductor Research Corporation through the Non-Classical CMOS Research Center (Task ID 1437.005), the Stanford Initiative in Nanoscale Materials and Processes (INMP), and the US-Israel Binational Science Foundation.",

year = "2011",

month = dec,

day = "5",

doi = "10.1063/1.3662966",

language = "英语",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "23",

}

TY - JOUR

T1 - Titania/alumina bilayer gate insulators for InGaAs metal-oxide- semiconductor devices

AU - Ahn, Jaesoo

AU - Geppert, Irina

AU - Gunji, Marika

AU - Holland, Martin

AU - Thayne, Iain

AU - Eizenberg, Moshe

AU - McIntyre, Paul C.

N1 - Funding Information: The authors acknowledge support from Semiconductor Research Corporation through the Non-Classical CMOS Research Center (Task ID 1437.005), the Stanford Initiative in Nanoscale Materials and Processes (INMP), and the US-Israel Binational Science Foundation.

PY - 2011/12/5

Y1 - 2011/12/5

N2 - We describe the electrical properties of atomic layer deposited TiO 2/Al 2O 3 bilayer gate oxides which simultaneously achieve high gate capacitance density and low gate leakage current density. Crystallization of the initially amorphous TiO 2 film contributes to a significant accumulation capacitance increase (∼33) observed after a forming gas anneal at 400°C. The bilayer dielectrics reduce gate leakage current density by approximately one order of magnitude at flatband compared to Al 2O 3 single layer of comparable capacitance equivalent thickness. The conduction band offset of TiO 2 relative to InGaAs is 0.6 eV, contributing to the ability of the stacked dielectric to suppress gate leakage conduction.

AB - We describe the electrical properties of atomic layer deposited TiO 2/Al 2O 3 bilayer gate oxides which simultaneously achieve high gate capacitance density and low gate leakage current density. Crystallization of the initially amorphous TiO 2 film contributes to a significant accumulation capacitance increase (∼33) observed after a forming gas anneal at 400°C. The bilayer dielectrics reduce gate leakage current density by approximately one order of magnitude at flatband compared to Al 2O 3 single layer of comparable capacitance equivalent thickness. The conduction band offset of TiO 2 relative to InGaAs is 0.6 eV, contributing to the ability of the stacked dielectric to suppress gate leakage conduction.

UR - http://www.scopus.com/inward/record.url?scp=83455200356&partnerID=8YFLogxK

U2 - 10.1063/1.3662966

DO - 10.1063/1.3662966

M3 - 文章

AN - SCOPUS:83455200356

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 232902

ER -

Titania/alumina bilayer gate insulators for InGaAs metal-oxide- semiconductor devices

Abstract

Access to Document

Other files and links

Fingerprint

Cite this