Titania/alumina bilayer gate insulators for InGaAs metal-oxide- semiconductor devices

Jaesoo Ahn, Irina Geppert, Marika Gunji, Martin Holland, Iain Thayne, Moshe Eizenberg, Paul C. McIntyre*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

We describe the electrical properties of atomic layer deposited TiO 2/Al 2O 3 bilayer gate oxides which simultaneously achieve high gate capacitance density and low gate leakage current density. Crystallization of the initially amorphous TiO 2 film contributes to a significant accumulation capacitance increase (∼33) observed after a forming gas anneal at 400°C. The bilayer dielectrics reduce gate leakage current density by approximately one order of magnitude at flatband compared to Al 2O 3 single layer of comparable capacitance equivalent thickness. The conduction band offset of TiO 2 relative to InGaAs is 0.6 eV, contributing to the ability of the stacked dielectric to suppress gate leakage conduction.

Original languageEnglish
Article number232902
JournalApplied Physics Letters
Volume99
Issue number23
DOIs
StatePublished - 5 Dec 2011
Externally publishedYes

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