TiSiN films produced by chemical vapor deposition as diffusion barriers for Cu metallization

S. Joseph*, M. Eizenberg, C. Marcadal, L. Chen

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

12 Scopus citations

Abstract

TiN films were produced by MOCVD of TDMAT followed by H2/N2 plasma treatment and a flash of SiH4. Good properties were observed when interposed between copper and silicon. A small improvement in the barriers integrity was achieved after the SiH4 flash due to the formation of Si3N4.

Original languageEnglish
Pages (from-to)1471-1475
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number4
DOIs
StatePublished - Jul 2002
Externally publishedYes
EventProceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - Santa Fe, NM, United States
Duration: 6 Jan 200210 Jan 2002

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