Time series modeling of the cycle-to-cycle variability in h-BN based memristors

J. B. Roldan, D. Maldonado, F. J. Alonso, A. M. Roldan, F. Hui, Y. Shi, F. Jimenez-Molinos, A. M. Aguilera, M. Lanza

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We have characterized and modeled memristor devices based on the Au/Ti/multilayer h-BN/Au/Ti stack. Resistive switching (RS) operation has been analysed by extracting the reset and set voltages and currents. The evolution of the set and reset parameters along a RS series was mathematically modeled in a cycle-to-cycle (CTC) basis by means of the Time Series Analysis (TSA). To do so, the Autocorrelation Functions (ACF) and the Partial Autocorrelation Functions (PACF) have been calculated. These tools help to perform a comprehensive variability study and to obtain the corresponding analytical models within the TSA context. Finally, we have included this modeling procedure in a complete compact model such as the Stanford to be able to account for this variability at the circuit level. Experimental current versus voltage (I-V) curves have been correctly fitted with the model.

Original languageEnglish
Title of host publication2021 IEEE International Reliability Physics Symposium, IRPS 2021 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728168937
DOIs
StatePublished - Mar 2021
Externally publishedYes
Event2021 IEEE International Reliability Physics Symposium, IRPS 2021 - Virtual, Monterey, United States
Duration: 21 Mar 202124 Mar 2021

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2021-March
ISSN (Print)1541-7026

Conference

Conference2021 IEEE International Reliability Physics Symposium, IRPS 2021
Country/TerritoryUnited States
CityVirtual, Monterey
Period21/03/2124/03/21

Keywords

  • Memristor
  • compact modeling
  • dielectric
  • electrical characterization
  • reliability
  • time series analysis
  • two-dimensional material
  • variability

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