TiCN: A new chemical vapor deposited contact barrier metallization for submicron devices

M. Eizenberg*, K. Littau, S. Ghanayem, A. Mak, Y. Maeda, M. Chang, A. K. Sinha

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

68 Scopus citations

Abstract

High-quality chemical vapor deposited TiCN films were produced in a single wafer reactor using a metallorganic (TDMAT) precursor. The films have excellent step coverage over high aspect-ratio contacts as well as very low particle content. These properties are obtained because the films are deposited under surface-reaction controlled conditions. The films show also excellent barrier properties against Al and WF6 attack. These properties make this material a superb contact barrier material for ultra-large-scale integrated devices.

Original languageEnglish
Pages (from-to)2416-2418
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number19
DOIs
StatePublished - 1994

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