Thermal stability of the aluminum/titanium carbide/silicon contact system

M. Eizenberg*, R. Brener, S. P. Murarka

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

The thermal stability of Al thin films on titanium carbide (Ti xC, where x defines the atomic ratio Ti/C) films reactively sputter deposited on Si substrate has been studied using Auger electron spectroscopy and x-ray diffraction. The stability of the deposited structure increases with increasing carbon content in the TixC films. However, an enhanced stability is obtained for a Ti3.1C film that is preannealed at 750°C for 30 min to induce a phase separation to a titanium silicide inner layer and a TixC outer layer prior to Al deposition. Such a film with an Al top layer maintains its structure even following 550°C-30 min heat treatment. The lower temperature (500°C) failure observed in other cases results from severe intermixing of layers and the formation of the ternary compound Ti7Al5Si12, whereas failures observed at 600°C result from similar intermixing and formation of the compound Al4C3, indicating the decomposition of TiC.

Original languageEnglish
Pages (from-to)3799-3803
Number of pages5
JournalJournal of Applied Physics
Volume55
Issue number10
DOIs
StatePublished - 1984
Externally publishedYes

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