@article{c5a8054aabc34139b6af303011f77775,
title = "The thermal stability of Pt/epitaxial Gd2O3 /Si stacks and its dependence on heat-treatment ambient",
abstract = "The stability of Pt/epitaxial Gd2 O3 /Si stacks is studied by monitoring the chemical and electrical properties following heat treatments in forming gas and in vacuum at temperatures between 400 and 650 °C. Our results show that stack instability is realized via diffusion of Gd through the Pt grain boundaries, which was observed after forming-gas annealing at 550 °C for 30 min. The Gd diffusion kinetics in forming gas is studied by secondary ion mass spectrometry analysis, showing that the diffusion process occurs according to C-type kinetics with an activation energy of 0.73±0.04 eV. Following vacuum heat treatments at 600 °C for 30 min, Si outdiffusion is observed, in addition to Gd outdiffusion. Si outdiffusion results in the formation of PtSi clusters on the metal surface following vacuum annealing at 650 °C. In contrast, in the case of forming-gas treatments, Si diffusion and silicide formation were detected only after annealing at 700 °C. The better stability of Pt/ Gd2 O3 /Si stacks in forming gas is correlated with the content of oxygen in the Pt layer during the treatment.",
author = "E. Lipp and Osten, {H. J.} and M. Eizenberg",
note = "Funding Information: This work was supported by a grant from the German-Israel Foundation for Scientific Research and Development and by the Russell Berrie Nanotechnology Institute at the Technion. The authors thank Dr. R. Brenner and C. Cytermann (Solid State Institute, Technion) for XPS and SIMS measurements. One of the authors (E.L.) acknowledges the support of the Israel Ministry of Science, Eshkol grant. FIG. 1. (a) High-frequency steady-state capacitance-voltage and (b) current-voltage characteristics of Pt / Gd 2 O 3 / Si capacitors before and after FGA for 30 min. FIG. 2. SIMS depth profiles of Pt / Gd 2 O 3 / Si stacks (a) before and (b) after FGA at 600 ° C for 30 min. FIG. 3. Gd SIMS depth profiles of Pt / Gd 2 O 3 / Si stacks subjected to FGA between 550 and 650 ° C for 30 min. FIG. 4. (a) Calculated Gd grain-boundary diffusivity and (b) Gd signal at the metal/oxide interface as a function of reciprocal temperature for Pt / Gd 2 O 3 / Si samples subjected to forming-gas annealing for 30 min. FIG. 5. (a) Gd and (b) CsSi SIMS depth profiles of Pt / Gd 2 O 3 / Si stacks subjected to vacuum annealing between 400 and 650 ° C for 30 min. FIG. 6. Top: Secondary electron HRSEM micrograph of a typical cluster at the Pt surface after vacuum annealing at 650 ° C for 30 min. Bottom: EDS measurements collected from the marked spots. FIG. 7. XRD patterns of Pt/Si stacks subjected to FG and vacuum annealing for 30 min. FIG. 8. ToF-SIMS depth profiles of Pt/Si stacks after (top) FG and (bottom) vacuum annealing at 300 ° C for 30 min. ",
year = "2009",
doi = "10.1063/1.3264674",
language = "英语",
volume = "106",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics",
number = "11",
}