The physical origin of dispersion in accumulation in InGaAs based metal oxide semiconductor gate stacks

Igor Krylov; Dan Ritter; Moshe Eizenberg

doi:10.1063/1.4919600

The physical origin of dispersion in accumulation in InGaAs based metal oxide semiconductor gate stacks

Igor Krylov, Dan Ritter, Moshe Eizenberg

Research output: Contribution to journal › Article › peer-review

41 Scopus citations

Abstract

Dispersion in accumulation is a widely observed phenomenon in technologically important InGaAs gate stacks. Two principal different interface defects were proposed as the physical origin of this phenomenon - disorder induced gap states and border traps. While the gap states are located at the semiconductor side of the interface, the border traps are related to the dielectric side. The study of Al₂O₃, HfO₂, and an intermediate composition of Hf_xAl_yO deposited on InGaAs enabled us to find a correlation between the dispersion and the dielectric/InGaAs band offset. At the same time, no change in the dispersion was observed after applying an effective pre-deposition treatment which results in significant reduction of the interface states. Both observations prove that border traps are the physical origin of the dispersion in accumulation in InGaAs based metal-oxide-semiconductor gate stacks.

Original language	English
Article number	174501
Journal	Journal of Applied Physics
Volume	117
Issue number	17
DOIs	https://doi.org/10.1063/1.4919600
State	Published - 7 May 2015
Externally published	Yes

Access to Document

10.1063/1.4919600

Cite this

@article{064b801de11b45f0857ac851d162d9d7,

title = "The physical origin of dispersion in accumulation in InGaAs based metal oxide semiconductor gate stacks",

abstract = "Dispersion in accumulation is a widely observed phenomenon in technologically important InGaAs gate stacks. Two principal different interface defects were proposed as the physical origin of this phenomenon - disorder induced gap states and border traps. While the gap states are located at the semiconductor side of the interface, the border traps are related to the dielectric side. The study of Al2O3, HfO2, and an intermediate composition of HfxAlyO deposited on InGaAs enabled us to find a correlation between the dispersion and the dielectric/InGaAs band offset. At the same time, no change in the dispersion was observed after applying an effective pre-deposition treatment which results in significant reduction of the interface states. Both observations prove that border traps are the physical origin of the dispersion in accumulation in InGaAs based metal-oxide-semiconductor gate stacks.",

author = "Igor Krylov and Dan Ritter and Moshe Eizenberg",

note = "Publisher Copyright: {\textcopyright} 2015 AIP Publishing LLC.",

year = "2015",

month = may,

day = "7",

doi = "10.1063/1.4919600",

language = "英语",

volume = "117",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "17",

}

TY - JOUR

T1 - The physical origin of dispersion in accumulation in InGaAs based metal oxide semiconductor gate stacks

AU - Krylov, Igor

AU - Ritter, Dan

AU - Eizenberg, Moshe

PY - 2015/5/7

Y1 - 2015/5/7

N2 - Dispersion in accumulation is a widely observed phenomenon in technologically important InGaAs gate stacks. Two principal different interface defects were proposed as the physical origin of this phenomenon - disorder induced gap states and border traps. While the gap states are located at the semiconductor side of the interface, the border traps are related to the dielectric side. The study of Al2O3, HfO2, and an intermediate composition of HfxAlyO deposited on InGaAs enabled us to find a correlation between the dispersion and the dielectric/InGaAs band offset. At the same time, no change in the dispersion was observed after applying an effective pre-deposition treatment which results in significant reduction of the interface states. Both observations prove that border traps are the physical origin of the dispersion in accumulation in InGaAs based metal-oxide-semiconductor gate stacks.

AB - Dispersion in accumulation is a widely observed phenomenon in technologically important InGaAs gate stacks. Two principal different interface defects were proposed as the physical origin of this phenomenon - disorder induced gap states and border traps. While the gap states are located at the semiconductor side of the interface, the border traps are related to the dielectric side. The study of Al2O3, HfO2, and an intermediate composition of HfxAlyO deposited on InGaAs enabled us to find a correlation between the dispersion and the dielectric/InGaAs band offset. At the same time, no change in the dispersion was observed after applying an effective pre-deposition treatment which results in significant reduction of the interface states. Both observations prove that border traps are the physical origin of the dispersion in accumulation in InGaAs based metal-oxide-semiconductor gate stacks.

UR - http://www.scopus.com/inward/record.url?scp=84928902243&partnerID=8YFLogxK

U2 - 10.1063/1.4919600

DO - 10.1063/1.4919600

M3 - 文章

AN - SCOPUS:84928902243

SN - 0021-8979

VL - 117

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 17

M1 - 174501

ER -

The physical origin of dispersion in accumulation in InGaAs based metal oxide semiconductor gate stacks

Abstract

Access to Document

Other files and links

Fingerprint

Cite this