The influence of carbon doping on the performance of Gd₂O₃ as high-k gate dielectric

TY - JOUR

T1 - The influence of carbon doping on the performance of Gd2O3 as high-k gate dielectric

AU - Shekhter, P.

AU - Chaudhuri, A. R.

AU - Laha, A.

AU - Yehezkel, S.

AU - Shriki, A.

AU - Osten, H. J.

AU - Eizenberg, M.

N1 - Publisher Copyright: © 2014 AIP Publishing LLC.

PY - 2014/12/29

Y1 - 2014/12/29

N2 - One of the approaches for overcoming the issue of leakage current in modern metal-oxide-semiconductor devices is utilizing the high dielectric constants of lanthanide based oxides. We investigated the effect of carbon doping directly into Gd2O3 layers on the performance of such devices. It was found that the amount of carbon introduced into the dielectric is above the solubility limit; carbon atoms enrich the oxide-semiconductor interface and cause a significant shift in the flat band voltage of the stack. Although the carbon atoms slightly degrade this interface, this method has a potential for tuning the flat band voltage of such structures.

AB - One of the approaches for overcoming the issue of leakage current in modern metal-oxide-semiconductor devices is utilizing the high dielectric constants of lanthanide based oxides. We investigated the effect of carbon doping directly into Gd2O3 layers on the performance of such devices. It was found that the amount of carbon introduced into the dielectric is above the solubility limit; carbon atoms enrich the oxide-semiconductor interface and cause a significant shift in the flat band voltage of the stack. Although the carbon atoms slightly degrade this interface, this method has a potential for tuning the flat band voltage of such structures.

UR - http://www.scopus.com/inward/record.url?scp=84937231002&partnerID=8YFLogxK

U2 - 10.1063/1.4905356

DO - 10.1063/1.4905356

M3 - 文章

AN - SCOPUS:84937231002

SN - 0003-6951

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 262901

ER -