The effect of post oxide deposition annealing on the effective work function in metal/Al2O3/InGaAs gate stack

R. Winter; I. Krylov; J. Ahn; P. C. McIntyre; M. Eizenberg

doi:10.1063/1.4879246

The effect of post oxide deposition annealing on the effective work function in metal/Al₂O₃/InGaAs gate stack

R. Winter, I. Krylov, J. Ahn, P. C. McIntyre, M. Eizenberg

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The effect of post oxide deposition annealing on the effective work function in metal/Al₂O₃/ InGaAs gate stacks was investigated. Using a systematic method for effective work function extraction, a shift of 0.3 ± 0.1 eV was found between the effective work function of forming gas annealed samples and vacuum annealed samples. The electrical measurements enabled us to obtain the band alignment of the metal/Al ₂O₃/InGaAs gate stack. This band alignment was confirmed by X-ray photoelectron spectroscopy. The measured shift in the effective work function between different annealing ambient may be attributed to indium out-diffusion during post oxide deposition annealing that is observed in forming gas anneal to a much larger extent than in vacuum.

Original language	English
Article number	202103
Journal	Applied Physics Letters
Volume	104
Issue number	20
DOIs	https://doi.org/10.1063/1.4879246
State	Published - 19 May 2014
Externally published	Yes

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title = "The effect of post oxide deposition annealing on the effective work function in metal/Al2O3/InGaAs gate stack",

abstract = "The effect of post oxide deposition annealing on the effective work function in metal/Al2O3/ InGaAs gate stacks was investigated. Using a systematic method for effective work function extraction, a shift of 0.3 ± 0.1 eV was found between the effective work function of forming gas annealed samples and vacuum annealed samples. The electrical measurements enabled us to obtain the band alignment of the metal/Al 2O3/InGaAs gate stack. This band alignment was confirmed by X-ray photoelectron spectroscopy. The measured shift in the effective work function between different annealing ambient may be attributed to indium out-diffusion during post oxide deposition annealing that is observed in forming gas anneal to a much larger extent than in vacuum.",

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AU - Winter, R.

AU - Krylov, I.

AU - Ahn, J.

AU - McIntyre, P. C.

AU - Eizenberg, M.

PY - 2014/5/19

Y1 - 2014/5/19

N2 - The effect of post oxide deposition annealing on the effective work function in metal/Al2O3/ InGaAs gate stacks was investigated. Using a systematic method for effective work function extraction, a shift of 0.3 ± 0.1 eV was found between the effective work function of forming gas annealed samples and vacuum annealed samples. The electrical measurements enabled us to obtain the band alignment of the metal/Al 2O3/InGaAs gate stack. This band alignment was confirmed by X-ray photoelectron spectroscopy. The measured shift in the effective work function between different annealing ambient may be attributed to indium out-diffusion during post oxide deposition annealing that is observed in forming gas anneal to a much larger extent than in vacuum.

AB - The effect of post oxide deposition annealing on the effective work function in metal/Al2O3/ InGaAs gate stacks was investigated. Using a systematic method for effective work function extraction, a shift of 0.3 ± 0.1 eV was found between the effective work function of forming gas annealed samples and vacuum annealed samples. The electrical measurements enabled us to obtain the band alignment of the metal/Al 2O3/InGaAs gate stack. This band alignment was confirmed by X-ray photoelectron spectroscopy. The measured shift in the effective work function between different annealing ambient may be attributed to indium out-diffusion during post oxide deposition annealing that is observed in forming gas anneal to a much larger extent than in vacuum.

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JO - Applied Physics Letters

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The effect of post oxide deposition annealing on the effective work function in metal/Al₂O₃/InGaAs gate stack

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