The effect of carbon on strain relaxation and phase formation in the Ti/Si1-x-yGexCy/Si contact system

A. Eyal*, R. Brener, R. Beserman, M. Eizenberg, Z. Atzmon, David J. Smith, J. W. Mayer

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

30 Scopus citations


We report the first study of interfacial reactions of a metal with Si1-x-yGexCy epitaxially grown on Si. The Ti/Si1-x-yGexCy/Si (0<y<1.7%) contact system was studied after isochronal heat treatments from 500 to 800°C. The results for Ti/Si1-xGex phase formation agree with recent published works. However, C incorporation in the epilayer causes a dramatic decrease in strain relaxation during the Ti reaction with the epilayer, a delay in the appearance of the C54 phase, a decreased Ge concentration in the silicide-germanide phases, and carbon accumulation (probably in the form of TiC) at the silicide-germanide/epilayer interface. Also, at high annealing temperatures, a roughing of the silicide-germanide/epilayer interface was detected for the C-containing samples. A possible explanation for the reduced strain relaxation is based on mobility of dislocations.

Original languageEnglish
Pages (from-to)64-66
Number of pages3
JournalApplied Physics Letters
Issue number1
StatePublished - 1 Jul 1996
Externally publishedYes


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